JPS56396B2 - - Google Patents

Info

Publication number
JPS56396B2
JPS56396B2 JP13918075A JP13918075A JPS56396B2 JP S56396 B2 JPS56396 B2 JP S56396B2 JP 13918075 A JP13918075 A JP 13918075A JP 13918075 A JP13918075 A JP 13918075A JP S56396 B2 JPS56396 B2 JP S56396B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP13918075A
Other versions
JPS5174906A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5174906A publication Critical patent/JPS5174906A/ja
Publication of JPS56396B2 publication Critical patent/JPS56396B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/285—Crystal holders, e.g. chucks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
JP13918075A 1974-11-21 1975-11-19 Expired JPS56396B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2455173A DE2455173C3 (de) 1974-11-21 1974-11-21 Vorrichtung zum senkrechten Haltern des den Keimkristall enthaltenden Stabendes beim tiegelfreien Zonenschmelzen

Publications (2)

Publication Number Publication Date
JPS5174906A JPS5174906A (ja) 1976-06-29
JPS56396B2 true JPS56396B2 (ja) 1981-01-07

Family

ID=5931409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13918075A Expired JPS56396B2 (ja) 1974-11-21 1975-11-19

Country Status (8)

Country Link
US (1) US4045183A (ja)
JP (1) JPS56396B2 (ja)
BE (1) BE831924R (ja)
CA (1) CA1062997A (ja)
DE (1) DE2455173C3 (ja)
IT (1) IT1049903B (ja)
PL (1) PL100188B3 (ja)
SU (1) SU656476A3 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2652199C3 (de) * 1976-11-16 1982-05-19 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Vorrichtung zum Abstützen des Kristallstabes beim tiegelfreien Zonenziehen
US4201746A (en) * 1976-12-27 1980-05-06 Monsanto Company Apparatus for zone refining
JPS6041038B2 (ja) * 1981-05-19 1985-09-13 フエロフルイデイクス・コ−ポレイシヨン 結晶成長炉からの結晶の処理装置及び処理方法
US4350560A (en) * 1981-08-07 1982-09-21 Ferrofluidics Corporation Apparatus for and method of handling crystals from crystal-growing furnaces
SE442473B (sv) * 1981-12-04 1985-12-23 Asea Ab Induktionsspole
DE3579080D1 (de) * 1984-09-04 1990-09-13 Forschungszentrum Juelich Gmbh Verfahren zur herstellung eines kristallinen koerpers aus der schmelze.
JPS63270383A (ja) * 1987-04-27 1988-11-08 Shin Etsu Handotai Co Ltd 半導体結晶棒の支持装置
US5092956A (en) * 1987-09-30 1992-03-03 The United States Of America As Represented By The United States National Aeronautics And Space Administration Device for mechanically stabilizing web ribbon buttons during growth initiation
US5217565A (en) * 1991-11-13 1993-06-08 Wisconsin Alumni Research Foundation Contactless heater floating zone refining and crystal growth
DE102014217605A1 (de) 2014-09-03 2016-03-03 Siltronic Ag Verfahren zum Abstützen eines wachsenden Einkristalls während des Kristallisierens des Einkristalls gemäß dem FZ-Verfahren

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2767066A (en) * 1953-08-17 1956-10-16 Standard Oil Co Impact baffle
US2917286A (en) * 1956-11-13 1959-12-15 Siemens Edison Swan Ltd Electronic equipment
US3134700A (en) * 1959-04-22 1964-05-26 Siemens Ag Dislocation removal by a last pass starting at a location displaced from the original seed into the grown crystal
US3211881A (en) * 1962-08-28 1965-10-12 Westinghouse Electric Corp Apparatus for zone heating
JPS41487Y1 (ja) * 1964-08-31 1966-01-20
BE680555A (ja) * 1965-05-27 1966-11-07
DE2358300C3 (de) * 1973-11-22 1978-07-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum senkrechten Halten eines Halbleiterkristallstabes beim tiegelfreien Zonenschmelzen

Also Published As

Publication number Publication date
JPS5174906A (ja) 1976-06-29
CA1062997A (en) 1979-09-25
PL100188B3 (pl) 1978-09-30
DE2455173B2 (de) 1978-03-23
BE831924R (fr) 1975-11-17
DE2455173A1 (de) 1976-06-10
DE2455173C3 (de) 1979-01-18
SU656476A3 (ru) 1979-04-05
IT1049903B (it) 1981-02-10
US4045183A (en) 1977-08-30

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