BE831924R - Procede et dispositif de fusion par zones sans creuset d'un barreau cristallin semi-conducteur - Google Patents
Procede et dispositif de fusion par zones sans creuset d'un barreau cristallin semi-conducteurInfo
- Publication number
- BE831924R BE831924R BE158773A BE158773A BE831924R BE 831924 R BE831924 R BE 831924R BE 158773 A BE158773 A BE 158773A BE 158773 A BE158773 A BE 158773A BE 831924 R BE831924 R BE 831924R
- Authority
- BE
- Belgium
- Prior art keywords
- crucible
- zones
- melting
- semiconductor crystalline
- crystalline bar
- Prior art date
Links
- 238000002844 melting Methods 0.000 title 1
- 230000008018 melting Effects 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/285—Crystal holders, e.g. chucks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/911—Seed or rod holders
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crucibles And Fluidized-Bed Furnaces (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2455173A DE2455173C3 (de) | 1974-11-21 | 1974-11-21 | Vorrichtung zum senkrechten Haltern des den Keimkristall enthaltenden Stabendes beim tiegelfreien Zonenschmelzen |
Publications (1)
Publication Number | Publication Date |
---|---|
BE831924R true BE831924R (fr) | 1975-11-17 |
Family
ID=5931409
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE158773A BE831924R (fr) | 1974-11-21 | 1975-07-30 | Procede et dispositif de fusion par zones sans creuset d'un barreau cristallin semi-conducteur |
Country Status (8)
Country | Link |
---|---|
US (1) | US4045183A (xx) |
JP (1) | JPS56396B2 (xx) |
BE (1) | BE831924R (xx) |
CA (1) | CA1062997A (xx) |
DE (1) | DE2455173C3 (xx) |
IT (1) | IT1049903B (xx) |
PL (1) | PL100188B3 (xx) |
SU (1) | SU656476A3 (xx) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2652199C3 (de) * | 1976-11-16 | 1982-05-19 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Vorrichtung zum Abstützen des Kristallstabes beim tiegelfreien Zonenziehen |
US4201746A (en) * | 1976-12-27 | 1980-05-06 | Monsanto Company | Apparatus for zone refining |
DE3152850A1 (de) * | 1981-05-19 | 1983-06-30 | Ferrofluidics Corp | Vorrichtung und verfahren zur handhabung von kristallen aus kristallziehoefen |
US4350560A (en) * | 1981-08-07 | 1982-09-21 | Ferrofluidics Corporation | Apparatus for and method of handling crystals from crystal-growing furnaces |
SE442473B (sv) * | 1981-12-04 | 1985-12-23 | Asea Ab | Induktionsspole |
EP0174004B1 (de) * | 1984-09-04 | 1990-08-08 | Forschungszentrum Jülich Gmbh | Verfahren zur Herstellung eines kristallinen Körpers aus der Schmelze |
JPS63270383A (ja) * | 1987-04-27 | 1988-11-08 | Shin Etsu Handotai Co Ltd | 半導体結晶棒の支持装置 |
US5092956A (en) * | 1987-09-30 | 1992-03-03 | The United States Of America As Represented By The United States National Aeronautics And Space Administration | Device for mechanically stabilizing web ribbon buttons during growth initiation |
US5217565A (en) * | 1991-11-13 | 1993-06-08 | Wisconsin Alumni Research Foundation | Contactless heater floating zone refining and crystal growth |
DE102014217605A1 (de) | 2014-09-03 | 2016-03-03 | Siltronic Ag | Verfahren zum Abstützen eines wachsenden Einkristalls während des Kristallisierens des Einkristalls gemäß dem FZ-Verfahren |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2767066A (en) * | 1953-08-17 | 1956-10-16 | Standard Oil Co | Impact baffle |
US2917286A (en) * | 1956-11-13 | 1959-12-15 | Siemens Edison Swan Ltd | Electronic equipment |
US3134700A (en) * | 1959-04-22 | 1964-05-26 | Siemens Ag | Dislocation removal by a last pass starting at a location displaced from the original seed into the grown crystal |
US3211881A (en) * | 1962-08-28 | 1965-10-12 | Westinghouse Electric Corp | Apparatus for zone heating |
JPS41487Y1 (xx) * | 1964-08-31 | 1966-01-20 | ||
BE680555A (xx) * | 1965-05-27 | 1966-11-07 | ||
DE2358300C3 (de) * | 1973-11-22 | 1978-07-20 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum senkrechten Halten eines Halbleiterkristallstabes beim tiegelfreien Zonenschmelzen |
-
1974
- 1974-11-21 DE DE2455173A patent/DE2455173C3/de not_active Expired
-
1975
- 1975-07-30 BE BE158773A patent/BE831924R/xx active
- 1975-11-13 IT IT29249/75A patent/IT1049903B/it active
- 1975-11-18 US US05/632,957 patent/US4045183A/en not_active Expired - Lifetime
- 1975-11-19 JP JP13918075A patent/JPS56396B2/ja not_active Expired
- 1975-11-19 PL PL1975184862A patent/PL100188B3/pl unknown
- 1975-11-20 SU SU752191804A patent/SU656476A3/ru active
- 1975-11-20 CA CA240,148A patent/CA1062997A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US4045183A (en) | 1977-08-30 |
JPS5174906A (xx) | 1976-06-29 |
DE2455173A1 (de) | 1976-06-10 |
DE2455173C3 (de) | 1979-01-18 |
CA1062997A (en) | 1979-09-25 |
JPS56396B2 (xx) | 1981-01-07 |
PL100188B3 (pl) | 1978-09-30 |
IT1049903B (it) | 1981-02-10 |
DE2455173B2 (de) | 1978-03-23 |
SU656476A3 (ru) | 1979-04-05 |
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