JPS5637624A - Manufacture of electrode in semiconductor device - Google Patents

Manufacture of electrode in semiconductor device

Info

Publication number
JPS5637624A
JPS5637624A JP11322979A JP11322979A JPS5637624A JP S5637624 A JPS5637624 A JP S5637624A JP 11322979 A JP11322979 A JP 11322979A JP 11322979 A JP11322979 A JP 11322979A JP S5637624 A JPS5637624 A JP S5637624A
Authority
JP
Japan
Prior art keywords
electrode
power source
copper
negative electrode
electrolyte
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11322979A
Other languages
Japanese (ja)
Inventor
Shigeo Hachiman
Masafumi Miyagawa
Kenichi Goto
Hikaru Endou
Naotake Hachiman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Components Co Ltd
Original Assignee
Toshiba Corp
Toshiba Components Co Ltd
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Components Co Ltd, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11322979A priority Critical patent/JPS5637624A/en
Publication of JPS5637624A publication Critical patent/JPS5637624A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To improve productivity by holding density of a copper ion in electrolyte for nickel plating within a predetermined range wherein proper treatment is applied to a formation section forming a plating layer and mechanical, thermal and chemical characteristics of electrode sections make superior ones. CONSTITUTION:Electrolyte 2 is accommodated in a tank for electrolyte plating and electrodes 5 are arranged in the solution 2. The positive electrode of a power source 4 is connected to the electrodes 5 through insulators 6. An insulating holder 7 and a semiconductor substrate 9 connected by a reverse L-shaped conductor 8 are also arranged in the solution 2 and the negative electrode of the power source 4 is connected to the substrate 9 through conductors 8, 10. Insulating films 11 are selectively formed on the surface of the substrate 9. Furthermore, a copper electrode 12 and a negative electrode 13 made by copper and platinum or the like are arranged in the solution 2. And the positive electrode of a DC power source 15 is connected to the copper electrode 12 through a switch 14. Mechanical, thermal and chemical characteristics of the electrode sections will be made superior ones by connecting the negative electrode of the power source 15 to the negative electrode 13 and productivity will be improved.
JP11322979A 1979-09-04 1979-09-04 Manufacture of electrode in semiconductor device Pending JPS5637624A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11322979A JPS5637624A (en) 1979-09-04 1979-09-04 Manufacture of electrode in semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11322979A JPS5637624A (en) 1979-09-04 1979-09-04 Manufacture of electrode in semiconductor device

Publications (1)

Publication Number Publication Date
JPS5637624A true JPS5637624A (en) 1981-04-11

Family

ID=14606830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11322979A Pending JPS5637624A (en) 1979-09-04 1979-09-04 Manufacture of electrode in semiconductor device

Country Status (1)

Country Link
JP (1) JPS5637624A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62209824A (en) * 1986-03-10 1987-09-16 Toshiba Components Kk Formation of semiconductor electrode
US5457345A (en) * 1992-05-11 1995-10-10 International Business Machines Corporation Metallization composite having nickle intermediate/interface

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62209824A (en) * 1986-03-10 1987-09-16 Toshiba Components Kk Formation of semiconductor electrode
US5457345A (en) * 1992-05-11 1995-10-10 International Business Machines Corporation Metallization composite having nickle intermediate/interface
US5719070A (en) * 1992-05-11 1998-02-17 International Business Machines Corporaton Metallization composite having nickel intermediate/interface

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