JPS5635423A - Method of correcting photomask by polishing - Google Patents

Method of correcting photomask by polishing

Info

Publication number
JPS5635423A
JPS5635423A JP10699380A JP10699380A JPS5635423A JP S5635423 A JPS5635423 A JP S5635423A JP 10699380 A JP10699380 A JP 10699380A JP 10699380 A JP10699380 A JP 10699380A JP S5635423 A JPS5635423 A JP S5635423A
Authority
JP
Japan
Prior art keywords
flaw
felt
mask
hemispherical
cover
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10699380A
Other languages
Japanese (ja)
Other versions
JPS571891B2 (en
Inventor
Kimio Yanagida
Katsuyuki Arii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10699380A priority Critical patent/JPS5635423A/en
Publication of JPS5635423A publication Critical patent/JPS5635423A/en
Publication of JPS571891B2 publication Critical patent/JPS571891B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To heighten the efficiency of correction of an acute angled flaw on a photomask made by using a reticle, by rotating a hemispherical felt while thrusting it at the flaw to change it into a hemispherical recess to reduce the diffusion of light. CONSTITUTION:A stage 13 is horizontally mounted with supports 15 in a cup- shaped cover 12 whose top is open. A photomask 1' having an acute flaw to be corrected is placed on the stage. A nozzle 14 is protruded in the cover 2 to feed an abrasive material to polish the mask 1'. The cover 12 can be moved back and forth and right and left. A polisher comprising a motor 7, a gear unit 9 and a rotary shaft 10 is supported by a stand 8 so that the polisher is located over the mask 1'. A hemispherical polishing felt 11 is attached to the rotary shaft 10. The mask 1' is displaced to thrust the felt 11 on the flaw part of the felt to polish it. The acute angled flaw (a) is thus changed into a gentle recess (b) to reduce the diffusion of light.
JP10699380A 1980-08-04 1980-08-04 Method of correcting photomask by polishing Granted JPS5635423A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10699380A JPS5635423A (en) 1980-08-04 1980-08-04 Method of correcting photomask by polishing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10699380A JPS5635423A (en) 1980-08-04 1980-08-04 Method of correcting photomask by polishing

Publications (2)

Publication Number Publication Date
JPS5635423A true JPS5635423A (en) 1981-04-08
JPS571891B2 JPS571891B2 (en) 1982-01-13

Family

ID=14447752

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10699380A Granted JPS5635423A (en) 1980-08-04 1980-08-04 Method of correcting photomask by polishing

Country Status (1)

Country Link
JP (1) JPS5635423A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6680486B1 (en) * 1984-05-18 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
WO2005124455A1 (en) * 2004-06-22 2005-12-29 Hoya Corporation Production method for mask blank-use translucent substrate, production method for mask blank, production method for exposing mask, production method for semiconductor device and production method for liquid crystal display unit, and method of correcting defect in exposing mask
JP2006039525A (en) * 2004-06-22 2006-02-09 Hoya Corp Production method for mask blank-use translucent substrate, production method for mask blank, production method for exposing mask, production method for semiconductor device and production method for liquid crystal display unit, and method of correcting defect in exposing mask

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02307933A (en) * 1989-05-18 1990-12-21 Nishi Nenshi Kk Apparatus for producing fancy yarn

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6680486B1 (en) * 1984-05-18 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
WO2005124455A1 (en) * 2004-06-22 2005-12-29 Hoya Corporation Production method for mask blank-use translucent substrate, production method for mask blank, production method for exposing mask, production method for semiconductor device and production method for liquid crystal display unit, and method of correcting defect in exposing mask
JP2006039525A (en) * 2004-06-22 2006-02-09 Hoya Corp Production method for mask blank-use translucent substrate, production method for mask blank, production method for exposing mask, production method for semiconductor device and production method for liquid crystal display unit, and method of correcting defect in exposing mask
US7862960B2 (en) 2004-06-22 2011-01-04 Hoya Corporation Manufacturing method of transparent substrate for mask blanks, manufacturing method of mask blanks, manufacturing method of exposure masks, manufacturing method of semiconductor devices, manufacturing method of liquid crystal display devices, and defect correction method of exposure masks
KR101018567B1 (en) * 2004-06-22 2011-03-03 호야 가부시키가이샤 Gray tone mask blank, gray tone mask and production method therefor, and production method for liquid crystal display device
KR101022600B1 (en) * 2004-06-22 2011-03-16 호야 가부시키가이샤 Gray tone mask blank, gray tone mask and production method therefor
US8039178B2 (en) 2004-06-22 2011-10-18 Hoya Corporation Manufacturing method of transparent substrate for mask blanks, manufacturing method of mask blanks, manufacturing method of exposure masks, manufacturing method of semiconductor devices, manufacturing method of liquid crystal display devices, and defect correction method of exposure masks

Also Published As

Publication number Publication date
JPS571891B2 (en) 1982-01-13

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