JPS5635312B2 - - Google Patents
Info
- Publication number
- JPS5635312B2 JPS5635312B2 JP7456877A JP7456877A JPS5635312B2 JP S5635312 B2 JPS5635312 B2 JP S5635312B2 JP 7456877 A JP7456877 A JP 7456877A JP 7456877 A JP7456877 A JP 7456877A JP S5635312 B2 JPS5635312 B2 JP S5635312B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/156—Sonos
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/701,049 US4057820A (en) | 1976-06-29 | 1976-06-29 | Dual gate MNOS transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS538573A JPS538573A (en) | 1978-01-26 |
| JPS5635312B2 true JPS5635312B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1981-08-15 |
Family
ID=24815859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7456877A Granted JPS538573A (en) | 1976-06-29 | 1977-06-24 | Mnos transistor |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4057820A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
| JP (1) | JPS538573A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS539469A (en) * | 1976-07-15 | 1978-01-27 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device having electrode of stepped structure and its production |
| JPS542679A (en) * | 1977-06-08 | 1979-01-10 | Mitsubishi Electric Corp | Nonvoltile semiconductor memory device |
| US4162504A (en) * | 1977-12-27 | 1979-07-24 | Rca Corp. | Floating gate solid-state storage device |
| EP0003413A3 (en) * | 1978-01-19 | 1979-08-22 | Sperry Corporation | Improvements relating to semiconductor memories |
| US4277881A (en) * | 1978-05-26 | 1981-07-14 | Rockwell International Corporation | Process for fabrication of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines |
| DE2918888C2 (de) * | 1979-05-10 | 1984-10-18 | Siemens AG, 1000 Berlin und 8000 München | MNOS-Speicherzelle und Verfahren zu ihrem Betrieb sowie zu ihrer Herstellung |
| US4334347A (en) * | 1979-10-19 | 1982-06-15 | Rca Corporation | Method of forming an improved gate member for a gate injected floating gate memory device |
| US4253106A (en) * | 1979-10-19 | 1981-02-24 | Rca Corporation | Gate injected floating gate memory device |
| JPS5836506B2 (ja) * | 1980-11-20 | 1983-08-09 | 富士通株式会社 | 半導体記憶装置 |
| JPS5891679A (ja) * | 1981-11-27 | 1983-05-31 | Hitachi Ltd | 半導体装置 |
| US4455742A (en) * | 1982-06-07 | 1984-06-26 | Westinghouse Electric Corp. | Method of making self-aligned memory MNOS-transistor |
| JPS5955071A (ja) * | 1982-09-24 | 1984-03-29 | Hitachi Micro Comput Eng Ltd | 不揮発性半導体装置 |
| JPS6076766U (ja) * | 1983-10-31 | 1985-05-29 | 岩堀 富久生 | ガスライタ |
| US4881313A (en) * | 1988-02-03 | 1989-11-21 | Cuno, Incorporated | Method of forming a cell filter with an exposed surface |
| US20060226467A1 (en) * | 2005-04-07 | 2006-10-12 | Macronix International Co., Ltd. | P-channel charge trapping memory device with sub-gate |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1136569A (en) * | 1965-12-22 | 1968-12-11 | Mullard Ltd | Insulated gate field effect transistors |
| US3633078A (en) * | 1969-10-24 | 1972-01-04 | Hughes Aircraft Co | Stable n-channel tetrode |
-
1976
- 1976-06-29 US US05/701,049 patent/US4057820A/en not_active Expired - Lifetime
-
1977
- 1977-06-24 JP JP7456877A patent/JPS538573A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS538573A (en) | 1978-01-26 |
| US4057820A (en) | 1977-11-08 |