JPS5634956B2 - - Google Patents
Info
- Publication number
- JPS5634956B2 JPS5634956B2 JP2710076A JP2710076A JPS5634956B2 JP S5634956 B2 JPS5634956 B2 JP S5634956B2 JP 2710076 A JP2710076 A JP 2710076A JP 2710076 A JP2710076 A JP 2710076A JP S5634956 B2 JPS5634956 B2 JP S5634956B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2710076A JPS52110531A (en) | 1976-03-15 | 1976-03-15 | Memory unit |
GB1089477A GB1556528A (en) | 1976-03-15 | 1977-03-15 | Nonvolatile memory system |
US05/778,023 US4168537A (en) | 1975-05-02 | 1977-03-15 | Nonvolatile memory system enabling nonvolatile data transfer during power on |
DE19772711221 DE2711221A1 (de) | 1976-03-15 | 1977-03-15 | Energieunabhaengige speichervorrichtung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2710076A JPS52110531A (en) | 1976-03-15 | 1976-03-15 | Memory unit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52110531A JPS52110531A (en) | 1977-09-16 |
JPS5634956B2 true JPS5634956B2 (fr) | 1981-08-13 |
Family
ID=12211653
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2710076A Granted JPS52110531A (en) | 1975-05-02 | 1976-03-15 | Memory unit |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS52110531A (fr) |
DE (1) | DE2711221A1 (fr) |
GB (1) | GB1556528A (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4263664A (en) * | 1979-08-31 | 1981-04-21 | Xicor, Inc. | Nonvolatile static random access memory system |
DE3147951A1 (de) * | 1981-12-03 | 1983-06-16 | Siemens AG, 1000 Berlin und 8000 München | Statische speicherzelle |
JPS6085496A (ja) * | 1983-10-17 | 1985-05-14 | Toshiba Corp | 半導体メモリ |
GB2171571B (en) * | 1985-02-27 | 1989-06-14 | Hughes Microelectronics Ltd | Non-volatile memory with predictable failure modes and method of data storage and retrieval |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2347968C3 (de) * | 1973-09-24 | 1980-06-26 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Assoziative Speicherzelle |
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1976
- 1976-03-15 JP JP2710076A patent/JPS52110531A/ja active Granted
-
1977
- 1977-03-15 DE DE19772711221 patent/DE2711221A1/de active Granted
- 1977-03-15 GB GB1089477A patent/GB1556528A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1556528A (en) | 1979-11-28 |
JPS52110531A (en) | 1977-09-16 |
DE2711221C2 (fr) | 1987-04-23 |
DE2711221A1 (de) | 1977-09-29 |