JPS5634099B2 - - Google Patents

Info

Publication number
JPS5634099B2
JPS5634099B2 JP8089475A JP8089475A JPS5634099B2 JP S5634099 B2 JPS5634099 B2 JP S5634099B2 JP 8089475 A JP8089475 A JP 8089475A JP 8089475 A JP8089475 A JP 8089475A JP S5634099 B2 JPS5634099 B2 JP S5634099B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8089475A
Other languages
Japanese (ja)
Other versions
JPS525224A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP50080894A priority Critical patent/JPS525224A/ja
Publication of JPS525224A publication Critical patent/JPS525224A/ja
Publication of JPS5634099B2 publication Critical patent/JPS5634099B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
JP50080894A 1975-07-02 1975-07-02 1trs-type memory cell Granted JPS525224A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50080894A JPS525224A (en) 1975-07-02 1975-07-02 1trs-type memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50080894A JPS525224A (en) 1975-07-02 1975-07-02 1trs-type memory cell

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2429981A Division JPS56124260A (en) 1981-02-23 1981-02-23 1-transistor type memory cell
JP2430081A Division JPS56124261A (en) 1981-02-23 1981-02-23 Manufacturing of 1-transistor type memory cell

Publications (2)

Publication Number Publication Date
JPS525224A JPS525224A (en) 1977-01-14
JPS5634099B2 true JPS5634099B2 (cs) 1981-08-07

Family

ID=13731058

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50080894A Granted JPS525224A (en) 1975-07-02 1975-07-02 1trs-type memory cell

Country Status (1)

Country Link
JP (1) JPS525224A (cs)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4240092A (en) * 1976-09-13 1980-12-16 Texas Instruments Incorporated Random access memory cell with different capacitor and transistor oxide thickness
US4163243A (en) * 1977-09-30 1979-07-31 Hewlett-Packard Company One-transistor memory cell with enhanced capacitance
JPS57111880A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Semiconductor storage device
JPH0682794B2 (ja) * 1985-10-22 1994-10-19 株式会社東芝 半導体記憶装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
US3740731A (en) * 1971-08-02 1973-06-19 Texas Instruments Inc One transistor dynamic memory cell
US3852800A (en) * 1971-08-02 1974-12-03 Texas Instruments Inc One transistor dynamic memory cell
US3740732A (en) * 1971-08-12 1973-06-19 Texas Instruments Inc Dynamic data storage cell
FR2239737B1 (cs) * 1973-08-02 1980-12-05 Texas Instruments Inc

Also Published As

Publication number Publication date
JPS525224A (en) 1977-01-14

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