JPS5629666A - Chemical deposition apparatus - Google Patents

Chemical deposition apparatus

Info

Publication number
JPS5629666A
JPS5629666A JP10525179A JP10525179A JPS5629666A JP S5629666 A JPS5629666 A JP S5629666A JP 10525179 A JP10525179 A JP 10525179A JP 10525179 A JP10525179 A JP 10525179A JP S5629666 A JPS5629666 A JP S5629666A
Authority
JP
Japan
Prior art keywords
outlet
gas
resistance
chemical deposition
deposition apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10525179A
Other languages
Japanese (ja)
Inventor
Sunao Takemura
Akira Doi
Toshihiro Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP10525179A priority Critical patent/JPS5629666A/en
Publication of JPS5629666A publication Critical patent/JPS5629666A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45568—Porous nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To obtain uniform concentration and flow of reaction gas in a reduced pressure type chemical deposition appratus by specifying the ratio of the flow resistance at the gas outlet in a reaction furnace to that at its neighborhood. CONSTITUTION:One or plural porous disks are installed near the gas outlet, and the ratio of the gas flow resistance Z1 near the outlet to the gas flow resistance Z0 at the gas outlet is controlled to 1>Z1/Z0>0.3. In a chemical deposition apparatus 1, for example, the reactor 3 contains objects being treated A and porous disks 7 having throughholes, gas flows from the inlet 5 and flows out from the outlet 6. The resistance Z1 near the outlet and the resistance Z0 at the outlet are adjusted to be 1>Z1/Z0>0.3, or preferably 0.3-0.4. This method simply ensures stabilized gas flow, thereby providing sufficient and uniform coating to the treating objects.
JP10525179A 1979-08-17 1979-08-17 Chemical deposition apparatus Pending JPS5629666A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10525179A JPS5629666A (en) 1979-08-17 1979-08-17 Chemical deposition apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10525179A JPS5629666A (en) 1979-08-17 1979-08-17 Chemical deposition apparatus

Publications (1)

Publication Number Publication Date
JPS5629666A true JPS5629666A (en) 1981-03-25

Family

ID=14402427

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10525179A Pending JPS5629666A (en) 1979-08-17 1979-08-17 Chemical deposition apparatus

Country Status (1)

Country Link
JP (1) JPS5629666A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2623524A1 (en) * 1987-11-20 1989-05-26 Lami Philippe Improvement to the process and device for metal deposition on a sample
CN101935826A (en) * 2010-09-13 2011-01-05 宁波升日太阳能电源有限公司 Plasma-enhanced chemical gas-phase deposition furnace
CN118127485A (en) * 2024-04-30 2024-06-04 无锡松煜科技有限公司 Method for depositing aluminum oxide film on surface of silicon wafer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2623524A1 (en) * 1987-11-20 1989-05-26 Lami Philippe Improvement to the process and device for metal deposition on a sample
CN101935826A (en) * 2010-09-13 2011-01-05 宁波升日太阳能电源有限公司 Plasma-enhanced chemical gas-phase deposition furnace
CN118127485A (en) * 2024-04-30 2024-06-04 无锡松煜科技有限公司 Method for depositing aluminum oxide film on surface of silicon wafer

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