JPS5627918A - Compound semiconductor epitaxial wafer - Google Patents
Compound semiconductor epitaxial waferInfo
- Publication number
- JPS5627918A JPS5627918A JP10421779A JP10421779A JPS5627918A JP S5627918 A JPS5627918 A JP S5627918A JP 10421779 A JP10421779 A JP 10421779A JP 10421779 A JP10421779 A JP 10421779A JP S5627918 A JPS5627918 A JP S5627918A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light absorbing
- actuating
- absorbing layer
- mixed crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
Landscapes
- Led Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10421779A JPS5627918A (en) | 1979-08-16 | 1979-08-16 | Compound semiconductor epitaxial wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10421779A JPS5627918A (en) | 1979-08-16 | 1979-08-16 | Compound semiconductor epitaxial wafer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5627918A true JPS5627918A (en) | 1981-03-18 |
JPS6226570B2 JPS6226570B2 (enrdf_load_stackoverflow) | 1987-06-09 |
Family
ID=14374784
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10421779A Granted JPS5627918A (en) | 1979-08-16 | 1979-08-16 | Compound semiconductor epitaxial wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5627918A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63134178U (enrdf_load_stackoverflow) * | 1987-02-25 | 1988-09-02 | ||
JP3111644B2 (ja) * | 1992-06-09 | 2000-11-27 | 三菱化学株式会社 | りん化ひ化ガリウムエピタキシャルウエハ |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53136983A (en) * | 1977-05-06 | 1978-11-29 | Mitsubishi Monsanto Chem | Method of producing electronic light emitting compound semiconductor |
-
1979
- 1979-08-16 JP JP10421779A patent/JPS5627918A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53136983A (en) * | 1977-05-06 | 1978-11-29 | Mitsubishi Monsanto Chem | Method of producing electronic light emitting compound semiconductor |
Also Published As
Publication number | Publication date |
---|---|
JPS6226570B2 (enrdf_load_stackoverflow) | 1987-06-09 |
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