JPS5626989B2 - - Google Patents
Info
- Publication number
- JPS5626989B2 JPS5626989B2 JP5683373A JP5683373A JPS5626989B2 JP S5626989 B2 JPS5626989 B2 JP S5626989B2 JP 5683373 A JP5683373 A JP 5683373A JP 5683373 A JP5683373 A JP 5683373A JP S5626989 B2 JPS5626989 B2 JP S5626989B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5683373A JPS5626989B2 (enrdf_load_stackoverflow) | 1973-05-23 | 1973-05-23 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5683373A JPS5626989B2 (enrdf_load_stackoverflow) | 1973-05-23 | 1973-05-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS509378A JPS509378A (enrdf_load_stackoverflow) | 1975-01-30 |
JPS5626989B2 true JPS5626989B2 (enrdf_load_stackoverflow) | 1981-06-22 |
Family
ID=13038375
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5683373A Expired JPS5626989B2 (enrdf_load_stackoverflow) | 1973-05-23 | 1973-05-23 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5626989B2 (enrdf_load_stackoverflow) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50137087A (enrdf_load_stackoverflow) * | 1974-04-17 | 1975-10-30 | ||
JPS5123090A (ja) * | 1974-08-20 | 1976-02-24 | Matsushita Electronics Corp | Setsugogeetogatadenkaikokatoranjisuta |
JPS584830B2 (ja) * | 1975-08-19 | 1983-01-27 | 松下電器産業株式会社 | 接合型電界効果トランジスタの製造方法 |
JPS5272185A (en) * | 1975-12-12 | 1977-06-16 | Matsushita Electric Ind Co Ltd | Two-gate type field effect transistor |
JPS587071B2 (ja) * | 1976-06-30 | 1983-02-08 | 松下電器産業株式会社 | 半導体装置の製造方法 |
JPS588151B2 (ja) * | 1976-09-30 | 1983-02-14 | 松下電器産業株式会社 | 接合型電界効果トランジスタの製造方法 |
JPS5848468A (ja) * | 1981-09-16 | 1983-03-22 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置 |
JPS5982772A (ja) * | 1982-11-02 | 1984-05-12 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果トランジスタ及びその製法 |
JPS60186070A (ja) * | 1984-03-05 | 1985-09-21 | Nippon Telegr & Teleph Corp <Ntt> | 埋め込み金属ゲ−ト縦型電界効果トランジスタの製造方法 |
JPS63228672A (ja) * | 1987-03-18 | 1988-09-22 | Fujitsu Ltd | 化合物半導体集積回路装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5221869B2 (enrdf_load_stackoverflow) * | 1971-09-09 | 1977-06-14 |
-
1973
- 1973-05-23 JP JP5683373A patent/JPS5626989B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS509378A (enrdf_load_stackoverflow) | 1975-01-30 |