JPS5624368B1 - - Google Patents

Info

Publication number
JPS5624368B1
JPS5624368B1 JP2270972A JP2270972A JPS5624368B1 JP S5624368 B1 JPS5624368 B1 JP S5624368B1 JP 2270972 A JP2270972 A JP 2270972A JP 2270972 A JP2270972 A JP 2270972A JP S5624368 B1 JPS5624368 B1 JP S5624368B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2270972A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5624368B1 publication Critical patent/JPS5624368B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/10—Induction heating apparatus, other than furnaces, for specific applications
    • H05B6/105—Induction heating apparatus, other than furnaces, for specific applications using a susceptor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
JP2270972A 1971-03-06 1972-03-03 Pending JPS5624368B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7103019A NL7103019A (ja) 1971-03-06 1971-03-06

Publications (1)

Publication Number Publication Date
JPS5624368B1 true JPS5624368B1 (ja) 1981-06-05

Family

ID=19812633

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2270972A Pending JPS5624368B1 (ja) 1971-03-06 1972-03-03

Country Status (7)

Country Link
US (1) US3754110A (ja)
JP (1) JPS5624368B1 (ja)
DE (1) DE2209782A1 (ja)
FR (1) FR2128647B1 (ja)
GB (1) GB1370717A (ja)
IT (1) IT949866B (ja)
NL (1) NL7103019A (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7209297A (ja) * 1972-07-01 1974-01-03
US3980854A (en) * 1974-11-15 1976-09-14 Rca Corporation Graphite susceptor structure for inductively heating semiconductor wafers
US4099041A (en) * 1977-04-11 1978-07-04 Rca Corporation Susceptor for heating semiconductor substrates
US4334354A (en) * 1977-07-12 1982-06-15 Trw Inc. Method of fabricating a solar array
US4409451A (en) * 1981-08-31 1983-10-11 United Technologies Corporation Induction furnace having improved thermal profile
DE19630703C2 (de) * 1996-07-30 2000-02-10 Mtu Muenchen Gmbh Verfahren und Vorrichtung zum Reparaturschweissen von Teilen aus Ni-Basis-Legierungen sowie Anwendung des Verfahrens und Vorrichtung
US8603248B2 (en) * 2006-02-10 2013-12-10 Veeco Instruments Inc. System and method for varying wafer surface temperature via wafer-carrier temperature offset
KR101294129B1 (ko) * 2008-08-29 2013-08-07 비코 인스트루먼츠 인코포레이티드 가변 열 저항을 가진 웨이퍼 캐리어
US10316412B2 (en) 2012-04-18 2019-06-11 Veeco Instruments Inc. Wafter carrier for chemical vapor deposition systems
US10167571B2 (en) 2013-03-15 2019-01-01 Veeco Instruments Inc. Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems
US10145013B2 (en) 2014-01-27 2018-12-04 Veeco Instruments Inc. Wafer carrier having retention pockets with compound radii for chemical vapor desposition systems

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2773923A (en) * 1953-01-26 1956-12-11 Raytheon Mfg Co Zone-refining apparatus
US3168696A (en) * 1962-06-26 1965-02-02 Erick O Schonstedt Magnetic flux directing cylindrical core having a plurality of serially arranged interruptions
FR1360497A (fr) * 1963-06-12 1964-05-08 Siemens Ag Procédé pour réaliser des couches cristallines en des substances peu volatiles, notamment des substances semi-conductrices
CH434550A (de) * 1964-11-21 1967-04-30 Tokushu Denki Kabushiki Kaisha Elektrisch beheizte drehbare Heiztrommel
US3524776A (en) * 1967-01-30 1970-08-18 Corning Glass Works Process for coating silicon wafers
US3399651A (en) * 1967-05-26 1968-09-03 Philco Ford Corp Susceptor for growing polycrystalline silicon on wafers of monocrystalline silicon
US3505499A (en) * 1968-04-04 1970-04-07 Siemens Ag Device for thermal processing of disc shaped objects for semiconductors
US3539759A (en) * 1968-11-08 1970-11-10 Ibm Susceptor structure in silicon epitaxy
US3608519A (en) * 1968-12-31 1971-09-28 Texas Instruments Inc Deposition reactor

Also Published As

Publication number Publication date
NL7103019A (ja) 1972-09-08
US3754110A (en) 1973-08-21
IT949866B (it) 1973-06-11
GB1370717A (en) 1974-10-16
DE2209782A1 (de) 1972-09-14
FR2128647B1 (ja) 1977-07-15
FR2128647A1 (ja) 1972-10-20

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