JPS562407B2 - - Google Patents

Info

Publication number
JPS562407B2
JPS562407B2 JP1310773A JP1310773A JPS562407B2 JP S562407 B2 JPS562407 B2 JP S562407B2 JP 1310773 A JP1310773 A JP 1310773A JP 1310773 A JP1310773 A JP 1310773A JP S562407 B2 JPS562407 B2 JP S562407B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1310773A
Other languages
Japanese (ja)
Other versions
JPS49102278A (cg-RX-API-DMAC7.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1310773A priority Critical patent/JPS562407B2/ja
Priority to US05/436,802 priority patent/US3936321A/en
Priority to GB462474A priority patent/GB1456437A/en
Publication of JPS49102278A publication Critical patent/JPS49102278A/ja
Publication of JPS562407B2 publication Critical patent/JPS562407B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/7605Making of isolation regions between components between components manufactured in an active substrate comprising AIII BV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
JP1310773A 1973-01-31 1973-01-31 Expired JPS562407B2 (cg-RX-API-DMAC7.html)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP1310773A JPS562407B2 (cg-RX-API-DMAC7.html) 1973-01-31 1973-01-31
US05/436,802 US3936321A (en) 1973-01-31 1974-01-25 Method of making a compound semiconductor layer of high resistivity
GB462474A GB1456437A (en) 1973-01-31 1974-01-31 Compound semiconductor layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1310773A JPS562407B2 (cg-RX-API-DMAC7.html) 1973-01-31 1973-01-31

Publications (2)

Publication Number Publication Date
JPS49102278A JPS49102278A (cg-RX-API-DMAC7.html) 1974-09-27
JPS562407B2 true JPS562407B2 (cg-RX-API-DMAC7.html) 1981-01-20

Family

ID=11823914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1310773A Expired JPS562407B2 (cg-RX-API-DMAC7.html) 1973-01-31 1973-01-31

Country Status (3)

Country Link
US (1) US3936321A (cg-RX-API-DMAC7.html)
JP (1) JPS562407B2 (cg-RX-API-DMAC7.html)
GB (1) GB1456437A (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0942244A (ja) * 1995-08-02 1997-02-10 Yuuma Kobo:Kk ボルト用アンカー

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5298787A (en) * 1979-08-10 1994-03-29 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor
FR2596777B1 (fr) * 1986-04-08 1994-01-21 Etat Francais Cnet Procede de preparation de semi-isolants 3-5 mono-cristallins par dopage et application des semi-isolants ainsi obtenus
JPH01220822A (ja) * 1988-02-29 1989-09-04 Mitsubishi Electric Corp 化合物半導体装置の製造方法
JPH01308063A (ja) * 1988-06-07 1989-12-12 Oki Electric Ind Co Ltd 半導体抵抗素子及びその形成方法
DE3839210A1 (de) * 1988-11-19 1990-05-23 Asea Brown Boveri Verfahren zum axialen einstellen der traegerlebensdauer
JP7169871B2 (ja) * 2018-12-26 2022-11-11 住重アテックス株式会社 半導体装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3718502A (en) * 1969-10-15 1973-02-27 J Gibbons Enhancement of diffusion of atoms into a heated substrate by bombardment
BE791929A (fr) * 1971-12-02 1973-03-16 Western Electric Co Procede de fabrication de regions isolantes dans un corps de semi-conducteur

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0942244A (ja) * 1995-08-02 1997-02-10 Yuuma Kobo:Kk ボルト用アンカー

Also Published As

Publication number Publication date
GB1456437A (en) 1976-11-24
US3936321A (en) 1976-02-03
JPS49102278A (cg-RX-API-DMAC7.html) 1974-09-27

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