JPS5621374A - Acceleration evaluation method for semiconductor memory device - Google Patents

Acceleration evaluation method for semiconductor memory device

Info

Publication number
JPS5621374A
JPS5621374A JP9584179A JP9584179A JPS5621374A JP S5621374 A JPS5621374 A JP S5621374A JP 9584179 A JP9584179 A JP 9584179A JP 9584179 A JP9584179 A JP 9584179A JP S5621374 A JPS5621374 A JP S5621374A
Authority
JP
Japan
Prior art keywords
level
phenomenon
readout
semiconductor memory
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9584179A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5712544B2 (enExample
Inventor
Masamichi Hirano
Tomoyuki Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9584179A priority Critical patent/JPS5621374A/ja
Publication of JPS5621374A publication Critical patent/JPS5621374A/ja
Publication of JPS5712544B2 publication Critical patent/JPS5712544B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Non-Volatile Memory (AREA)
JP9584179A 1979-07-27 1979-07-27 Acceleration evaluation method for semiconductor memory device Granted JPS5621374A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9584179A JPS5621374A (en) 1979-07-27 1979-07-27 Acceleration evaluation method for semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9584179A JPS5621374A (en) 1979-07-27 1979-07-27 Acceleration evaluation method for semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5621374A true JPS5621374A (en) 1981-02-27
JPS5712544B2 JPS5712544B2 (enExample) 1982-03-11

Family

ID=14148594

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9584179A Granted JPS5621374A (en) 1979-07-27 1979-07-27 Acceleration evaluation method for semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5621374A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60109241A (ja) * 1983-11-17 1985-06-14 Fujitsu Ltd 半導体装置の製造方法
JPS63102642A (ja) * 1986-10-18 1988-05-07 Mitsue Osawa 人参ジヤムの製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60109241A (ja) * 1983-11-17 1985-06-14 Fujitsu Ltd 半導体装置の製造方法
JPS63102642A (ja) * 1986-10-18 1988-05-07 Mitsue Osawa 人参ジヤムの製造方法

Also Published As

Publication number Publication date
JPS5712544B2 (enExample) 1982-03-11

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