JPS5619110B2 - - Google Patents

Info

Publication number
JPS5619110B2
JPS5619110B2 JP9452173A JP9452173A JPS5619110B2 JP S5619110 B2 JPS5619110 B2 JP S5619110B2 JP 9452173 A JP9452173 A JP 9452173A JP 9452173 A JP9452173 A JP 9452173A JP S5619110 B2 JPS5619110 B2 JP S5619110B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP9452173A
Other languages
Japanese (ja)
Other versions
JPS4967582A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4967582A publication Critical patent/JPS4967582A/ja
Publication of JPS5619110B2 publication Critical patent/JPS5619110B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
JP9452173A 1972-08-25 1973-08-24 Expired JPS5619110B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00283685A US3840887A (en) 1972-08-25 1972-08-25 Selective irradiation of gated semiconductor devices to control gate sensitivity

Publications (2)

Publication Number Publication Date
JPS4967582A JPS4967582A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-07-01
JPS5619110B2 true JPS5619110B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1981-05-06

Family

ID=23087113

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9452173A Expired JPS5619110B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1972-08-25 1973-08-24

Country Status (5)

Country Link
US (1) US3840887A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5619110B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA990861A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1437127A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT994679B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4177477A (en) * 1974-03-11 1979-12-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor switching device
JPS586312B2 (ja) * 1975-04-04 1983-02-03 三菱電機株式会社 ハンドウタイセイギヨソウチ
US4042947A (en) * 1976-01-06 1977-08-16 Westinghouse Electric Corporation High voltage transistor with high gain
US4076555A (en) * 1976-05-17 1978-02-28 Westinghouse Electric Corporation Irradiation for rapid turn-off reverse blocking diode thyristor
GB1599230A (en) * 1977-08-26 1981-09-30 Gen Electric Unijunction transistors
US4240844A (en) * 1978-12-22 1980-12-23 Westinghouse Electric Corp. Reducing the switching time of semiconductor devices by neutron irradiation
US4311534A (en) * 1980-06-27 1982-01-19 Westinghouse Electric Corp. Reducing the reverse recovery charge of thyristors by nuclear irradiation
US4792530A (en) * 1987-03-30 1988-12-20 International Rectifier Corporation Process for balancing forward and reverse characteristic of thyristors
JPH05160391A (ja) * 1991-12-02 1993-06-25 Sankooshiya:Kk サージ防護デバイスの保持電流制御方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5213716A (en) * 1975-07-22 1977-02-02 Canon Inc Multielectrode recorder

Also Published As

Publication number Publication date
US3840887A (en) 1974-10-08
GB1437127A (en) 1976-05-26
CA990861A (en) 1976-06-08
JPS4967582A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-07-01
IT994679B (it) 1975-10-20

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