JPS561782B2 - - Google Patents

Info

Publication number
JPS561782B2
JPS561782B2 JP134276A JP134276A JPS561782B2 JP S561782 B2 JPS561782 B2 JP S561782B2 JP 134276 A JP134276 A JP 134276A JP 134276 A JP134276 A JP 134276A JP S561782 B2 JPS561782 B2 JP S561782B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP134276A
Other languages
Japanese (ja)
Other versions
JPS5193683A (enEXAMPLES
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5193683A publication Critical patent/JPS5193683A/ja
Publication of JPS561782B2 publication Critical patent/JPS561782B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67Complementary BJTs
    • H10D84/673Vertical complementary BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP134276A 1975-01-10 1976-01-07 Expired JPS561782B2 (enEXAMPLES)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7500713A FR2297495A1 (fr) 1975-01-10 1975-01-10 Structure de transistors complementaires et son procede de fabrication

Publications (2)

Publication Number Publication Date
JPS5193683A JPS5193683A (enEXAMPLES) 1976-08-17
JPS561782B2 true JPS561782B2 (enEXAMPLES) 1981-01-16

Family

ID=9149625

Family Applications (1)

Application Number Title Priority Date Filing Date
JP134276A Expired JPS561782B2 (enEXAMPLES) 1975-01-10 1976-01-07

Country Status (8)

Country Link
US (1) US4058825A (enEXAMPLES)
JP (1) JPS561782B2 (enEXAMPLES)
CA (1) CA1046167A (enEXAMPLES)
DE (1) DE2600375C3 (enEXAMPLES)
FR (1) FR2297495A1 (enEXAMPLES)
GB (1) GB1531811A (enEXAMPLES)
IT (1) IT1054024B (enEXAMPLES)
NL (1) NL7600062A (enEXAMPLES)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2408914A1 (fr) * 1977-11-14 1979-06-08 Radiotechnique Compelec Dispositif semi-conducteur monolithique comprenant deux transistors complementaires et son procede de fabrication
GB2123207A (en) * 1982-06-30 1984-01-25 Westinghouse Electric Corp Glass passivated high power semiconductor devices
JPS62250661A (ja) * 1986-04-23 1987-10-31 Fuji Electric Co Ltd 半導体装置
GB2277197B (en) * 1993-04-13 1997-08-27 Motorola Inc Voltage protection arrangement
US9478537B2 (en) * 2009-07-15 2016-10-25 Cree, Inc. High-gain wide bandgap darlington transistors and related methods of fabrication
US9761608B1 (en) * 2016-08-15 2017-09-12 International Business Machines Corporation Lateral bipolar junction transistor with multiple base lengths

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3624454A (en) * 1969-09-15 1971-11-30 Gen Motors Corp Mesa-type semiconductor device
BE791487A (fr) * 1971-11-18 1973-03-16 Rca Corp Dispositif semiconducteur
US3755722A (en) * 1972-09-28 1973-08-28 Gen Motors Corp Resistor isolation for double mesa transistors
FR2216677B1 (enEXAMPLES) * 1973-02-02 1977-08-26 Radiotechnique Compelec
FR2216678B1 (enEXAMPLES) * 1973-02-02 1977-08-19 Radiotechnique Compelec
US3836996A (en) * 1973-09-26 1974-09-17 Rca Corp Semiconductor darlington circuit
US3836997A (en) * 1973-09-26 1974-09-17 Rca Corp Semiconductor darlington circuit
US3898483A (en) * 1973-10-18 1975-08-05 Fairchild Camera Instr Co Bipolar memory circuit
US3904450A (en) * 1974-04-26 1975-09-09 Bell Telephone Labor Inc Method of fabricating injection logic integrated circuits using oxide isolation

Also Published As

Publication number Publication date
JPS5193683A (enEXAMPLES) 1976-08-17
GB1531811A (en) 1978-11-08
FR2297495A1 (fr) 1976-08-06
CA1046167A (en) 1979-01-09
US4058825A (en) 1977-11-15
NL7600062A (nl) 1976-07-13
DE2600375C3 (de) 1981-11-26
FR2297495B1 (enEXAMPLES) 1983-07-08
IT1054024B (it) 1981-11-10
DE2600375A1 (de) 1976-07-15
DE2600375B2 (de) 1981-03-12

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