JPS56167334A - Method of heating material with sio2 as base - Google Patents

Method of heating material with sio2 as base

Info

Publication number
JPS56167334A
JPS56167334A JP6511581A JP6511581A JPS56167334A JP S56167334 A JPS56167334 A JP S56167334A JP 6511581 A JP6511581 A JP 6511581A JP 6511581 A JP6511581 A JP 6511581A JP S56167334 A JPS56167334 A JP S56167334A
Authority
JP
Japan
Prior art keywords
sio2
base
heating material
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6511581A
Other languages
English (en)
Inventor
Derufuino Mikeranjiero
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of JPS56167334A publication Critical patent/JPS56167334A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Glass Compositions (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Silicon Compounds (AREA)
JP6511581A 1980-04-28 1981-04-28 Method of heating material with sio2 as base Pending JPS56167334A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14398380A 1980-04-28 1980-04-28

Publications (1)

Publication Number Publication Date
JPS56167334A true JPS56167334A (en) 1981-12-23

Family

ID=22506554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6511581A Pending JPS56167334A (en) 1980-04-28 1981-04-28 Method of heating material with sio2 as base

Country Status (8)

Country Link
US (1) US4443493A (ja)
JP (1) JPS56167334A (ja)
CA (1) CA1174285A (ja)
DE (1) DE3108146A1 (ja)
FR (1) FR2481517B1 (ja)
GB (1) GB2075749B (ja)
IT (1) IT1144106B (ja)
NL (1) NL8101679A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59103346A (ja) * 1982-11-18 1984-06-14 テキサス・インスツルメンツ・インコ−ポレイテツド 半導体装置上の絶縁物層を選択的に加熱する方法

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56160050A (en) * 1980-05-14 1981-12-09 Fujitsu Ltd Semiconductor device and manufacture thereof
US4349584A (en) * 1981-04-28 1982-09-14 Rca Corporation Process for tapering openings in ternary glass coatings
US4431900A (en) * 1982-01-15 1984-02-14 Fairchild Camera & Instrument Corporation Laser induced flow Ge-O based materials
US4474831A (en) * 1982-08-27 1984-10-02 Varian Associates, Inc. Method for reflow of phosphosilicate glass
US5098854A (en) * 1984-07-09 1992-03-24 National Semiconductor Corporation Process for forming self-aligned silicide base contact for bipolar transistor
DE3437072A1 (de) * 1984-10-09 1986-04-10 Dieter Prof. Dr. Linz Bäuerle Verfahren zur herstellung von leiterbahnen und/oder elektroden auf dielektrischem material
US5080962A (en) * 1985-02-25 1992-01-14 University Of Florida Method for making silica optical devices and devices produced thereby
NL8500931A (nl) * 1985-03-29 1986-10-16 Philips Nv Werkwijze voor het omzetten van polykristallijn halfgeleidermateriaal in monokristallijn halfgeleidermateriaal.
US4729962A (en) * 1986-03-24 1988-03-08 The United States Of America As Represented By The United States Department Of Energy Semiconductor junction formation by directed heat
US5221422A (en) * 1988-06-06 1993-06-22 Digital Equipment Corporation Lithographic technique using laser scanning for fabrication of electronic components and the like
EP0388075B1 (en) * 1989-03-16 1996-11-06 STMicroelectronics, Inc. Contacts for semiconductor devices
US5427825A (en) * 1993-02-09 1995-06-27 Rutgers, The State University Localized surface glazing of ceramic articles
US7419922B2 (en) * 2001-05-09 2008-09-02 Gibson Richard M Flame-resistant, high visibility, anti-static fabric and apparel formed therefrom
US6946412B2 (en) * 2001-05-09 2005-09-20 Glen Raven, Inc. Flame-resistant, high visibility, anti-static fabric and apparel formed therefrom
US6787228B2 (en) * 2001-05-09 2004-09-07 Glen Raven, Inc. Flame-resistant and high visibility fabric and apparel formed therefrom
US6706650B2 (en) 2001-05-09 2004-03-16 Glen Raven, Inc. Flame-resistant and high visibility fabric and apparel formed therefrom
KR101042871B1 (ko) * 2006-05-11 2011-06-20 아사히 가라스 가부시키가이샤 용융 유리의 거품 제거 방법 및 제거 장치, 그리고 유리의제조 방법
FR2951281B1 (fr) * 2009-10-12 2012-03-23 Commissariat Energie Atomique Procede de microdeformation de la face avant d'une piece mince, par modification de la face arriere ou de la peripherie de la piece
US11508808B2 (en) * 2018-10-11 2022-11-22 Actron Technology Corporation Rectifier device, rectifier, generator device, and powertrain for vehicle

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5280779A (en) * 1975-12-27 1977-07-06 Fujitsu Ltd Production of simiconductor device
JPS5526619A (en) * 1978-08-15 1980-02-26 Toshiba Corp Method of producing semiconductor device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2040180B2 (de) * 1970-01-22 1977-08-25 Intel Corp, Mountain View, Calif. (V.St.A.) Verfahren zur verhinderung von mechanischen bruechen einer duennen, die oberflaeche eines halbleiterkoerpers ueberdeckende isolierschichten ueberziehenden elektrisch leitenden schicht
US3912558A (en) * 1974-05-03 1975-10-14 Fairchild Camera Instr Co Method of MOS circuit fabrication
FR2277430A1 (fr) * 1974-07-03 1976-01-30 Labo Electronique Physique Galette de microcanaux avec face d'entree des canaux arrondie et procede de fabrication
US4151008A (en) * 1974-11-15 1979-04-24 Spire Corporation Method involving pulsed light processing of semiconductor devices
US3920483A (en) * 1974-11-25 1975-11-18 Ibm Method of ion implantation through a photoresist mask
GB1571795A (en) * 1975-12-01 1980-07-16 Manuf Belge D Aiguilles Sa Smoothing the eyes of metal needles
CA1095387A (en) * 1976-02-17 1981-02-10 Conrad M. Banas Skin melting
GB2023926B (en) * 1978-06-22 1983-03-16 Western Electric Co Conductors for semiconductor devices
US4258078A (en) * 1978-06-22 1981-03-24 Bell Telephone Laboratories, Incorporated Metallization for integrated circuits
JPS5534444A (en) * 1978-08-31 1980-03-11 Fujitsu Ltd Preparation of semiconductor device
GB2056769B (en) * 1978-11-28 1983-03-30 Western Electric Co Dual wavelength laser annealing of material
IT1140645B (it) * 1979-03-05 1986-10-01 Rca Corp Materiale composito di passivazione per un dispositivo semiconduttore comprendente uno strato di nitruro di silicio (si alla terza in alla quarta) ed uno strato di vetro al fosfosilicato (psg) e metodo di fabbricazione delle stesso
DE2937993A1 (de) * 1979-09-20 1981-04-02 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von integrierten mos-halbleiterschaltungen nach der silizium-gate-technologie
US4284659A (en) * 1980-05-12 1981-08-18 Bell Telephone Laboratories Insulation layer reflow

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5280779A (en) * 1975-12-27 1977-07-06 Fujitsu Ltd Production of simiconductor device
JPS5526619A (en) * 1978-08-15 1980-02-26 Toshiba Corp Method of producing semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59103346A (ja) * 1982-11-18 1984-06-14 テキサス・インスツルメンツ・インコ−ポレイテツド 半導体装置上の絶縁物層を選択的に加熱する方法

Also Published As

Publication number Publication date
DE3108146A1 (de) 1981-12-24
FR2481517B1 (fr) 1985-11-22
FR2481517A1 (fr) 1981-10-30
IT8167249A0 (it) 1981-02-23
NL8101679A (nl) 1981-11-16
DE3108146C2 (ja) 1989-05-18
IT1144106B (it) 1986-10-29
GB2075749B (en) 1984-08-30
CA1174285A (en) 1984-09-11
US4443493A (en) 1984-04-17
GB2075749A (en) 1981-11-18

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