JPS5616120B2 - - Google Patents

Info

Publication number
JPS5616120B2
JPS5616120B2 JP7242774A JP7242774A JPS5616120B2 JP S5616120 B2 JPS5616120 B2 JP S5616120B2 JP 7242774 A JP7242774 A JP 7242774A JP 7242774 A JP7242774 A JP 7242774A JP S5616120 B2 JPS5616120 B2 JP S5616120B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7242774A
Other versions
JPS5037684A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5037684A publication Critical patent/JPS5037684A/ja
Publication of JPS5616120B2 publication Critical patent/JPS5616120B2/ja
Expired legal-status Critical Current

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16C—SHAFTS; FLEXIBLE SHAFTS; ELEMENTS OR CRANKSHAFT MECHANISMS; ROTARY BODIES OTHER THAN GEARING ELEMENTS; BEARINGS
    • F16C32/00—Bearings not otherwise provided for
    • F16C32/06—Bearings not otherwise provided for with moving member supported by a fluid cushion formed, at least to a large extent, otherwise than by movement of the shaft, e.g. hydrostatic air-cushion bearings
    • F16C32/0681—Construction or mounting aspects of hydrostatic bearings, for exclusively rotary movement, related to the direction of load
    • F16C32/0685—Construction or mounting aspects of hydrostatic bearings, for exclusively rotary movement, related to the direction of load for radial load only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/32—Mechanisms for moving either the charge or the heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/28—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using weight changes of the crystal or the melt, e.g. flotation methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP7242774A 1973-06-28 1974-06-26 Expired JPS5616120B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7323686A FR2235458B1 (ja) 1973-06-28 1973-06-28

Publications (2)

Publication Number Publication Date
JPS5037684A JPS5037684A (ja) 1975-04-08
JPS5616120B2 true JPS5616120B2 (ja) 1981-04-14

Family

ID=9121711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7242774A Expired JPS5616120B2 (ja) 1973-06-28 1974-06-26

Country Status (7)

Country Link
US (1) US3966416A (ja)
JP (1) JPS5616120B2 (ja)
BE (1) BE816922A (ja)
DE (1) DE2430813C3 (ja)
FR (1) FR2235458B1 (ja)
GB (1) GB1458565A (ja)
IT (1) IT1015398B (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4190630A (en) * 1978-01-03 1980-02-26 Vsesojuzny Nauchno-Isslekovatelsky Institut Monokristallov Stsintillyatsionnykh Materialov I Osobo Chistykh Khimicheskikh Veschestv Apparatus for pulling single crystals from melt
FR2470285A1 (fr) * 1979-11-20 1981-05-29 Jeumont Schneider Palier hydrostatique de guidage d'un arbre
WO1994007582A1 (en) * 1992-10-06 1994-04-14 Merck & Co., Inc. Dual jet crystallizer apparatus
RU2456385C2 (ru) * 2009-12-14 2012-07-20 Общество с ограниченной ответственностью "Диал" Способ получения монокристаллов и устройство для его осуществления
CN117959738B (zh) * 2024-04-02 2024-06-04 山西兴源盛科技有限公司 一种氯化钙生产用蒸发装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1080071B (de) * 1959-02-03 1960-04-21 Paul Lucas Dipl Chem Vorrichtung zum Ziehen von Einkristallen aus einer Schmelze
US3020131A (en) * 1959-10-22 1962-02-06 Knapic Electro Physics Inc Rotating pedestal
US3340016A (en) * 1963-09-26 1967-09-05 Consortium Elektrochem Ind Producing and regulating translatory movement in the manufacture of semiconductor bodies
US3353914A (en) * 1964-12-30 1967-11-21 Martin Marietta Corp Method of seed-pulling beta silicon carbide crystals from a melt containing silver and the product thereof
US3493348A (en) * 1966-07-01 1970-02-03 Ibm Buoyant device in crystal growing

Also Published As

Publication number Publication date
FR2235458A1 (ja) 1975-01-24
DE2430813A1 (de) 1975-01-09
DE2430813B2 (de) 1981-03-12
BE816922A (fr) 1974-12-27
GB1458565A (en) 1976-12-15
IT1015398B (it) 1977-05-10
JPS5037684A (ja) 1975-04-08
DE2430813C3 (de) 1982-02-25
FR2235458B1 (ja) 1977-05-13
US3966416A (en) 1976-06-29

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