JPS56146272A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56146272A
JPS56146272A JP4984080A JP4984080A JPS56146272A JP S56146272 A JPS56146272 A JP S56146272A JP 4984080 A JP4984080 A JP 4984080A JP 4984080 A JP4984080 A JP 4984080A JP S56146272 A JPS56146272 A JP S56146272A
Authority
JP
Japan
Prior art keywords
base
region
emitter
contact
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4984080A
Other languages
Japanese (ja)
Inventor
Mamoru Fuse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4984080A priority Critical patent/JPS56146272A/en
Publication of JPS56146272A publication Critical patent/JPS56146272A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To enhance the electrostatic breakdown withstanding intensity of the semiconductor device by a method wherein shelters are so formed in a base region part from an emitter region part up to a base contact as to form plural current pathes. CONSTITUTION:The base region 13, the base contact 14, the emitter region 11 and an emitter contact 12 are formed in an N type collector region 15, and especially the base region 13 is so formed by processing the diffusion mask thereof as to expose the collector regions 15' on the surface. When slits are provided between the interval from a P-N junction part of the N type emitter 11 and the P type base 14 up to the base contact 14 to expose a part of the collector regions 15', an impulsive current to be generated when an impulsive voltage is applied is fractionalized uniformly by those regions 15'.
JP4984080A 1980-04-16 1980-04-16 Semiconductor device Pending JPS56146272A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4984080A JPS56146272A (en) 1980-04-16 1980-04-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4984080A JPS56146272A (en) 1980-04-16 1980-04-16 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56146272A true JPS56146272A (en) 1981-11-13

Family

ID=12842266

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4984080A Pending JPS56146272A (en) 1980-04-16 1980-04-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56146272A (en)

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