JPS56146226A - Method and device for manufacturing large area silicon article - Google Patents
Method and device for manufacturing large area silicon articleInfo
- Publication number
- JPS56146226A JPS56146226A JP3858781A JP3858781A JPS56146226A JP S56146226 A JPS56146226 A JP S56146226A JP 3858781 A JP3858781 A JP 3858781A JP 3858781 A JP3858781 A JP 3858781A JP S56146226 A JPS56146226 A JP S56146226A
- Authority
- JP
- Japan
- Prior art keywords
- large area
- manufacturing large
- area silicon
- silicon article
- article
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/007—Pulling on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3010557A DE3010557C2 (en) | 1980-03-19 | 1980-03-19 | Method and device for manufacturing large-area silicon bodies for solar cells |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56146226A true JPS56146226A (en) | 1981-11-13 |
Family
ID=6097681
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3858781A Pending JPS56146226A (en) | 1980-03-19 | 1981-03-17 | Method and device for manufacturing large area silicon article |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS56146226A (en) |
DE (1) | DE3010557C2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60234316A (en) * | 1984-04-09 | 1985-11-21 | シーメンス、アクチエンゲゼルシヤフト | Method of producing silicon crystal for solar battery |
JPH06283734A (en) * | 1993-03-29 | 1994-10-07 | Tdk Corp | Polycrystalline silicon solar cell and its manufacture |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3209548A1 (en) * | 1982-03-16 | 1983-10-20 | Siemens AG, 1000 Berlin und 8000 München | Solar cell arrangement in thin-layer construction made from semiconductor material, and process for the fabrication thereof |
DE3210492A1 (en) * | 1982-03-22 | 1983-09-29 | Siemens AG, 1000 Berlin und 8000 München | Method of producing large-area modular silicon bodies |
DE3210403A1 (en) * | 1982-03-22 | 1983-09-22 | Siemens AG, 1000 Berlin und 8000 München | Method of producing large-area modular silicon bodies |
DE3217686A1 (en) * | 1982-05-11 | 1983-11-17 | Siemens AG, 1000 Berlin und 8000 München | Apparatus for producing large-area strip-type silicon bodies for solar cells |
DE3226931A1 (en) * | 1982-07-19 | 1984-01-19 | Siemens AG, 1000 Berlin und 8000 München | Process and equipment for producing large-area band-shaped silicon bodies for use in the manufacture of solar cells |
DE3231268A1 (en) * | 1982-08-23 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | METHOD AND DEVICE FOR ASYMMETRICALLY COATING A BAND-SHAPED CARRIER BODY WITH SILICON FOR THE PROCESSING OF SOLAR CELLS |
DE3231326A1 (en) * | 1982-08-23 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | DEVICE FOR PRODUCING LARGE-SCALE, BAND-SHAPED SILICON BODIES FOR SOLAR CELLS |
DE3231267A1 (en) * | 1982-08-23 | 1984-02-23 | Siemens AG, 1000 Berlin und 8000 München | METHOD AND DEVICE FOR ASYMMETRICALLY COATING A BAND-SHAPED CARRIER BODY WITH SILICON FOR THE PROCESSING OF SOLAR CELLS |
DE3240245A1 (en) * | 1982-10-29 | 1984-05-03 | Siemens AG, 1000 Berlin und 8000 München | DEVICE FOR PRODUCING TAPE-SHAPED SILICON BODIES FOR SOLAR CELLS |
DE3247532A1 (en) * | 1982-12-22 | 1984-06-28 | Siemens AG, 1000 Berlin und 8000 München | METHOD FOR PRODUCING LARGE-SIDED SILICONE BODIES SUBSTRATES MADE FROM CARBON-COATED SILICON DIOXIDE FABRIC |
DE3305933A1 (en) * | 1983-02-21 | 1984-08-23 | Siemens AG, 1000 Berlin und 8000 München | Method and apparatus for producing polycrystalline, large surface-area silicon crystal bodies for solar cells |
DE3306135A1 (en) * | 1983-02-22 | 1984-08-23 | Siemens AG, 1000 Berlin und 8000 München | Method and apparatus for producing polycrystalline, large surface-area silicon crystal bodies for solar cells |
DE3404818A1 (en) * | 1984-02-10 | 1985-08-14 | Siemens AG, 1000 Berlin und 8000 München | Device for producing a pn junction in a silicon strip produced according to the continuous process |
EP0158181B1 (en) * | 1984-04-09 | 1987-09-16 | Siemens Aktiengesellschaft | Process for producing large-surface silicon crystal bodies for solar cells |
DE3736341A1 (en) * | 1987-10-27 | 1989-05-11 | Siemens Ag | Method for manufacturing strip-shaped silicon crystals by horizontal pulling from the melt |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2850805C2 (en) * | 1978-11-23 | 1986-08-28 | Siemens AG, 1000 Berlin und 8000 München | Process for the production of disk-shaped or ribbon-shaped silicon crystals with a columnar structure for solar cells |
-
1980
- 1980-03-19 DE DE3010557A patent/DE3010557C2/en not_active Expired
-
1981
- 1981-03-17 JP JP3858781A patent/JPS56146226A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60234316A (en) * | 1984-04-09 | 1985-11-21 | シーメンス、アクチエンゲゼルシヤフト | Method of producing silicon crystal for solar battery |
JPH0582751B2 (en) * | 1984-04-09 | 1993-11-22 | Siemens Ag | |
JPH06283734A (en) * | 1993-03-29 | 1994-10-07 | Tdk Corp | Polycrystalline silicon solar cell and its manufacture |
Also Published As
Publication number | Publication date |
---|---|
DE3010557C2 (en) | 1986-08-21 |
DE3010557A1 (en) | 1981-09-24 |
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