JPS56140628A - Method of electron beam exposure - Google Patents

Method of electron beam exposure

Info

Publication number
JPS56140628A
JPS56140628A JP4400580A JP4400580A JPS56140628A JP S56140628 A JPS56140628 A JP S56140628A JP 4400580 A JP4400580 A JP 4400580A JP 4400580 A JP4400580 A JP 4400580A JP S56140628 A JPS56140628 A JP S56140628A
Authority
JP
Japan
Prior art keywords
high speed
information
initial
pieces
counter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4400580A
Other languages
Japanese (ja)
Other versions
JPS592372B2 (en
Inventor
Seigo Igaki
Yoshiaki Goto
Yasuo Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4400580A priority Critical patent/JPS592372B2/en
Publication of JPS56140628A publication Critical patent/JPS56140628A/en
Publication of JPS592372B2 publication Critical patent/JPS592372B2/en
Expired legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Abstract

PURPOSE:To greatly reduce the exposing time by discretely providing a plurality of simple shape regions in one subfield and determining an original point of each region by introducing an initial shifting quantity to a high speed scanning D/A converter. CONSTITUTION:A simple-shape-region initiating point memory 10 memorizes the coordinate information of the original point of each simple region, and outputs different pieces of information xn and yn for various regions. Pieces of information of widthes and lengths are given to a high speed counter 6. An initial value INT is given to the counter 6 from a high speed initial point shifting circuit 11 based on the pieces of information xn and yn. Therefore up and down counting is performed in the range of xn-xn+ax. As a result, an output G of the high speed scanning D/A converter 9 varies with said counting. Since pieces of information Xn and Yn given to an initial point register 5 are the coordinates of the initial points of the subfields, an output F from a positioning D/A counter 8 varies for every subfield unit. When said outputs F and G are synthesized, the electron beam deflected by an deflection amplifier DEF can contribute the high speed exposure of the desired pattern in the deflection field.
JP4400580A 1980-04-03 1980-04-03 Electron beam exposure method Expired JPS592372B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4400580A JPS592372B2 (en) 1980-04-03 1980-04-03 Electron beam exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4400580A JPS592372B2 (en) 1980-04-03 1980-04-03 Electron beam exposure method

Publications (2)

Publication Number Publication Date
JPS56140628A true JPS56140628A (en) 1981-11-04
JPS592372B2 JPS592372B2 (en) 1984-01-18

Family

ID=12679582

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4400580A Expired JPS592372B2 (en) 1980-04-03 1980-04-03 Electron beam exposure method

Country Status (1)

Country Link
JP (1) JPS592372B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4937458A (en) * 1987-10-16 1990-06-26 Hitachi, Ltd. Electron beam lithography apparatus including a beam blanking device utilizing a reference comparator

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60241470A (en) * 1984-05-15 1985-11-30 松下電工株式会社 Hitting exerciser
JPS6150578A (en) * 1984-08-20 1986-03-12 松下電工株式会社 Hitting exerciser
JPS61137578A (en) * 1984-12-07 1986-06-25 松下電工株式会社 Batting exerciser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4937458A (en) * 1987-10-16 1990-06-26 Hitachi, Ltd. Electron beam lithography apparatus including a beam blanking device utilizing a reference comparator

Also Published As

Publication number Publication date
JPS592372B2 (en) 1984-01-18

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