JPS56124243A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS56124243A JPS56124243A JP2430881A JP2430881A JPS56124243A JP S56124243 A JPS56124243 A JP S56124243A JP 2430881 A JP2430881 A JP 2430881A JP 2430881 A JP2430881 A JP 2430881A JP S56124243 A JPS56124243 A JP S56124243A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- motion
- type
- scr
- check
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To check SCR motion of a parasitic NPN element and prevent an IC from erroneous operation, in an N epitaxial layer separated from a P layer, by providing an annular N<+> layer surrounding the P layer and a P separating layer. CONSTITUTION:A P type Si substrate 1 is provided with an N<+> flush layer 2, an N epitaxial layer 3 is laminated and separated by a P layer 4. The N layer 3 is provided with a P type resistance element 5, a P base 6, an N emitter 7 and an N<+> connection layer 8. Further, an annular N<+> layer 9 is provided between the P type resistance element and the separating layer 4 and connected to a flush layer. Surface is covered by an SiO2 10 and provided with electrodes 11 and 12, and the N layer 13 is laminated onto reverse of the substrate 1 and connected to a metallic tab 14. A distance between the P layers 5 and 6, which are to become a supply source of hole, and the P type separation layer 4 is made larger than the dispersion distance. For this reason, even if joining between the P base 6 and the N collector 3 were to be transitionally biased backwardly to allow hole to flow to the N layer 3, it is rejoined at the N<+> layer 9, and therefore, it is possible to check SCR motion of a parastic NPN element and prevent an erroneous motion.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2430881A JPS56124243A (en) | 1981-02-23 | 1981-02-23 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2430881A JPS56124243A (en) | 1981-02-23 | 1981-02-23 | Semiconductor integrated circuit device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4972773A Division JPS501686A (en) | 1973-05-07 | 1973-05-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56124243A true JPS56124243A (en) | 1981-09-29 |
Family
ID=12134542
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2430881A Pending JPS56124243A (en) | 1981-02-23 | 1981-02-23 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56124243A (en) |
-
1981
- 1981-02-23 JP JP2430881A patent/JPS56124243A/en active Pending
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