JPS56119875A - Semiconductor x-ray detector - Google Patents

Semiconductor x-ray detector

Info

Publication number
JPS56119875A
JPS56119875A JP2370580A JP2370580A JPS56119875A JP S56119875 A JPS56119875 A JP S56119875A JP 2370580 A JP2370580 A JP 2370580A JP 2370580 A JP2370580 A JP 2370580A JP S56119875 A JPS56119875 A JP S56119875A
Authority
JP
Japan
Prior art keywords
semiconductor
detecting element
mount base
grid
ray detecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2370580A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6345072B2 (enrdf_load_stackoverflow
Inventor
Tetsuo Kurihara
Kosaku Nishio
Kazuo Nishino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2370580A priority Critical patent/JPS56119875A/ja
Publication of JPS56119875A publication Critical patent/JPS56119875A/ja
Publication of JPS6345072B2 publication Critical patent/JPS6345072B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
  • X-Ray Techniques (AREA)
JP2370580A 1980-02-27 1980-02-27 Semiconductor x-ray detector Granted JPS56119875A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2370580A JPS56119875A (en) 1980-02-27 1980-02-27 Semiconductor x-ray detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2370580A JPS56119875A (en) 1980-02-27 1980-02-27 Semiconductor x-ray detector

Publications (2)

Publication Number Publication Date
JPS56119875A true JPS56119875A (en) 1981-09-19
JPS6345072B2 JPS6345072B2 (enrdf_load_stackoverflow) 1988-09-07

Family

ID=12117770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2370580A Granted JPS56119875A (en) 1980-02-27 1980-02-27 Semiconductor x-ray detector

Country Status (1)

Country Link
JP (1) JPS56119875A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6345072B2 (enrdf_load_stackoverflow) 1988-09-07

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