JPS56114364A - Composite for covering semiconductor device - Google Patents

Composite for covering semiconductor device

Info

Publication number
JPS56114364A
JPS56114364A JP1735580A JP1735580A JPS56114364A JP S56114364 A JPS56114364 A JP S56114364A JP 1735580 A JP1735580 A JP 1735580A JP 1735580 A JP1735580 A JP 1735580A JP S56114364 A JPS56114364 A JP S56114364A
Authority
JP
Japan
Prior art keywords
low melting
melting point
heat
composite
noncrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1735580A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6146420B2 (cg-RX-API-DMAC10.html
Inventor
Kazuo Hatano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Electric Glass Co Ltd
Original Assignee
Nippon Electric Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Glass Co Ltd filed Critical Nippon Electric Glass Co Ltd
Priority to JP1735580A priority Critical patent/JPS56114364A/ja
Publication of JPS56114364A publication Critical patent/JPS56114364A/ja
Publication of JPS6146420B2 publication Critical patent/JPS6146420B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W74/43—

Landscapes

  • Glass Compositions (AREA)
  • Formation Of Insulating Films (AREA)
JP1735580A 1980-02-13 1980-02-13 Composite for covering semiconductor device Granted JPS56114364A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1735580A JPS56114364A (en) 1980-02-13 1980-02-13 Composite for covering semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1735580A JPS56114364A (en) 1980-02-13 1980-02-13 Composite for covering semiconductor device

Publications (2)

Publication Number Publication Date
JPS56114364A true JPS56114364A (en) 1981-09-08
JPS6146420B2 JPS6146420B2 (cg-RX-API-DMAC10.html) 1986-10-14

Family

ID=11941732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1735580A Granted JPS56114364A (en) 1980-02-13 1980-02-13 Composite for covering semiconductor device

Country Status (1)

Country Link
JP (1) JPS56114364A (cg-RX-API-DMAC10.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4621064A (en) * 1984-03-19 1986-11-04 Nippon Electric Glass Company, Limited Low temperature sealing composition with synthetic zircon
JPWO2019239448A1 (ja) * 2018-06-11 2020-06-25 新電元工業株式会社 半導体装置の製造方法及び半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4621064A (en) * 1984-03-19 1986-11-04 Nippon Electric Glass Company, Limited Low temperature sealing composition with synthetic zircon
JPWO2019239448A1 (ja) * 2018-06-11 2020-06-25 新電元工業株式会社 半導体装置の製造方法及び半導体装置

Also Published As

Publication number Publication date
JPS6146420B2 (cg-RX-API-DMAC10.html) 1986-10-14

Similar Documents

Publication Publication Date Title
ATE75350T1 (de) Verbinder mit schmelzeinsatz und innerer temperatursteuerung.
JPS56114364A (en) Composite for covering semiconductor device
ES8305039A1 (es) "metodo de producir nuevas lineas de celulas t humanas".
JPS5794586A (en) Method for stopping conduction of electricity of electrolytic cell
JPS5363979A (en) Sealing method of semiconductor element and lead frame used for the same
JPS56168059A (en) System for power generation and collecting heat by solar beams
JPS5632751A (en) Glass for passivation of silicon semiconductor element
JPS5795549A (en) Solar heat collector device
JPS5618370A (en) Manufacture of electrode plate for lead storage battery
JPS567358A (en) Manufacture of grid for lead-acid battery
JPS6453504A (en) Overload fusible resistor
JPS5297384A (en) Electric furnace
JPS5754335A (en) Preparation of semiconductor device
JPS51148838A (en) Manufacturing method for sheath heaters
JPS5444798A (en) Manufacturing process of thick film resistance
JPS57106512A (en) Manufacture of carbon product
RAUCH Integral glass covers for silicon solar cells[Final Technical Report, 19 May 1971- 31 Oct. 1974]
JPS5771825A (en) Start-up of vitrification melting furnace
Kalinovich et al. Ionic Mass Transfer in Molybdenum--Nickel Alloy in an Electrical Field
JPS57112082A (en) Manufacture of diode with short switching time
Enjo et al. EFFECT OF OXIDE FILM ON THE EARLY PROCESS OF DIFFUSION WELDING. I. FUNDAMENTAL STUDY OF THE EARLY PROCESS OF DIFFUSION WELDING BY MEANS OF ELECTRIC RESISTANCE MEASUREMENT
JPS54131862A (en) Conduction terminal cutting method for sealing metal substance
JPS5285730A (en) Method of heater wire of molybdenum disilicate series and conductor te rminal
Kerneck et al. Manufacture of Electrical Contacts by TIG Welding
JPS55153341A (en) Semiconductor device