JPS5611226B2 - - Google Patents
Info
- Publication number
- JPS5611226B2 JPS5611226B2 JP493473A JP493473A JPS5611226B2 JP S5611226 B2 JPS5611226 B2 JP S5611226B2 JP 493473 A JP493473 A JP 493473A JP 493473 A JP493473 A JP 493473A JP S5611226 B2 JPS5611226 B2 JP S5611226B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
- H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
Landscapes
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP493473A JPS5611226B2 (https=) | 1973-01-09 | 1973-01-09 | |
| GB5978673A GB1422287A (en) | 1973-01-09 | 1973-12-27 | Insulated gate transistor |
| US05/432,116 US3938174A (en) | 1973-01-09 | 1974-01-09 | Semiconductor integrated circuit and method of manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP493473A JPS5611226B2 (https=) | 1973-01-09 | 1973-01-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4991783A JPS4991783A (https=) | 1974-09-02 |
| JPS5611226B2 true JPS5611226B2 (https=) | 1981-03-12 |
Family
ID=11597394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP493473A Expired JPS5611226B2 (https=) | 1973-01-09 | 1973-01-09 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3938174A (https=) |
| JP (1) | JPS5611226B2 (https=) |
| GB (1) | GB1422287A (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6173621U (https=) * | 1984-10-16 | 1986-05-19 |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51118969A (en) * | 1975-04-11 | 1976-10-19 | Fujitsu Ltd | Manufacturing method of semiconductor memory |
| JPS54107268A (en) * | 1978-02-10 | 1979-08-22 | Toshiba Corp | Integrated circuit unit and its production |
| GB2123605A (en) * | 1982-06-22 | 1984-02-01 | Standard Microsyst Smc | MOS integrated circuit structure and method for its fabrication |
| US4811066A (en) * | 1987-10-19 | 1989-03-07 | Motorola, Inc. | Compact multi-state ROM cell |
| JPH0389555A (ja) * | 1989-09-01 | 1991-04-15 | Hitachi Ltd | 半導体装置及びその製法 |
| US5644155A (en) * | 1994-09-06 | 1997-07-01 | Integrated Device Technology, Inc. | Structure and fabrication of high capacitance insulated-gate field effect transistor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3711753A (en) * | 1971-06-04 | 1973-01-16 | Signetics Corp | Enhancement mode n-channel mos structure and method |
-
1973
- 1973-01-09 JP JP493473A patent/JPS5611226B2/ja not_active Expired
- 1973-12-27 GB GB5978673A patent/GB1422287A/en not_active Expired
-
1974
- 1974-01-09 US US05/432,116 patent/US3938174A/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6173621U (https=) * | 1984-10-16 | 1986-05-19 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4991783A (https=) | 1974-09-02 |
| US3938174A (en) | 1976-02-10 |
| GB1422287A (en) | 1976-01-21 |