JPS56101696A - Semiconductor memory device and method of programming same - Google Patents
Semiconductor memory device and method of programming sameInfo
- Publication number
- JPS56101696A JPS56101696A JP13668580A JP13668580A JPS56101696A JP S56101696 A JPS56101696 A JP S56101696A JP 13668580 A JP13668580 A JP 13668580A JP 13668580 A JP13668580 A JP 13668580A JP S56101696 A JPS56101696 A JP S56101696A
- Authority
- JP
- Japan
- Prior art keywords
- memory device
- semiconductor memory
- programming same
- programming
- same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0491—Virtual ground arrays
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/080,712 US4282446A (en) | 1979-10-01 | 1979-10-01 | High density floating gate EPROM programmable by charge storage |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56101696A true JPS56101696A (en) | 1981-08-14 |
JPS645400B2 JPS645400B2 (ja) | 1989-01-30 |
Family
ID=22159135
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13668580A Granted JPS56101696A (en) | 1979-10-01 | 1980-09-30 | Semiconductor memory device and method of programming same |
Country Status (2)
Country | Link |
---|---|
US (1) | US4282446A (ja) |
JP (1) | JPS56101696A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07508121A (ja) * | 1993-05-11 | 1995-09-07 | 富士通株式会社 | 不揮発性メモリ装置,不揮発性メモリセル,並びに不揮発性メモリセルおよび複数のトランジスタの各々の閾値を調整する方法 |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4366555A (en) * | 1980-08-01 | 1982-12-28 | National Semiconductor Corporation | Electrically erasable programmable read only memory |
US4577215A (en) * | 1983-02-18 | 1986-03-18 | Rca Corporation | Dual word line, electrically alterable, nonvolatile floating gate memory device |
US4566022A (en) * | 1983-01-27 | 1986-01-21 | International Business Machines Corporation | Flexible/compressed array macro design |
JPS60113397A (ja) * | 1983-11-24 | 1985-06-19 | Fujitsu Ltd | プログラマブルリ−ドオンリメモリ装置 |
US4727515A (en) * | 1983-12-14 | 1988-02-23 | General Electric Co. | High density programmable memory array |
IT1213241B (it) * | 1984-11-07 | 1989-12-14 | Ates Componenti Elettron | Matrice di memoria eprom con celle elementari simmetriche mos e suo metodo di scrittura. |
KR950000341B1 (ko) * | 1984-11-26 | 1995-01-13 | 가부시기가이샤 히다찌세이사꾸쇼 | 메모리를 내장한 반도체 집적회로 장치 |
US5172196A (en) * | 1984-11-26 | 1992-12-15 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
US5016215A (en) * | 1987-09-30 | 1991-05-14 | Texas Instruments Incorporated | High speed EPROM with reverse polarity voltages applied to source and drain regions during reading and writing |
JP2511485B2 (ja) * | 1988-01-12 | 1996-06-26 | 沖電気工業株式会社 | 半導体記憶装置 |
US5067111A (en) * | 1988-10-28 | 1991-11-19 | Kabushiki Kaisha Toshiba | Semiconductor memory device having a majority logic for determining data to be read out |
JPH0778484A (ja) * | 1993-07-13 | 1995-03-20 | Nkk Corp | 記憶素子、不揮発性メモリ、不揮発性記憶装置及びそれを用いた情報記憶方法 |
EP0649172B1 (en) * | 1993-10-15 | 2002-01-02 | Sony Corporation | Non-volatile memory device |
US5623444A (en) * | 1994-08-25 | 1997-04-22 | Nippon Kokan Kk | Electrically-erasable ROM with pulse-driven memory cell transistors |
US5615146A (en) * | 1994-11-11 | 1997-03-25 | Nkk Corporation | Nonvolatile memory with write data latch |
US5808338A (en) * | 1994-11-11 | 1998-09-15 | Nkk Corporation | Nonvolatile semiconductor memory |
US5602779A (en) * | 1994-11-11 | 1997-02-11 | Nkk Corporation | Nonvolatile multivalue memory |
US5661686A (en) * | 1994-11-11 | 1997-08-26 | Nkk Corporation | Nonvolatile semiconductor memory |
JPH08329691A (ja) * | 1995-05-30 | 1996-12-13 | Nkk Corp | 不揮発性半導体記憶装置 |
JPH0945090A (ja) * | 1995-07-31 | 1997-02-14 | Nkk Corp | 不揮発性半導体記憶装置 |
JPH0945094A (ja) * | 1995-07-31 | 1997-02-14 | Nkk Corp | 不揮発性半導体記憶装置 |
EP0782144B1 (en) * | 1995-12-29 | 2001-05-23 | STMicroelectronics S.r.l. | Programmable device with basic modules electrically connected by flash memory cells |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4112509A (en) * | 1976-12-27 | 1978-09-05 | Texas Instruments Incorporated | Electrically alterable floating gate semiconductor memory device |
US4151021A (en) * | 1977-01-26 | 1979-04-24 | Texas Instruments Incorporated | Method of making a high density floating gate electrically programmable ROM |
US4184207A (en) * | 1978-01-27 | 1980-01-15 | Texas Instruments Incorporated | High density floating gate electrically programmable ROM |
-
1979
- 1979-10-01 US US06/080,712 patent/US4282446A/en not_active Expired - Lifetime
-
1980
- 1980-09-30 JP JP13668580A patent/JPS56101696A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07508121A (ja) * | 1993-05-11 | 1995-09-07 | 富士通株式会社 | 不揮発性メモリ装置,不揮発性メモリセル,並びに不揮発性メモリセルおよび複数のトランジスタの各々の閾値を調整する方法 |
Also Published As
Publication number | Publication date |
---|---|
US4282446A (en) | 1981-08-04 |
JPS645400B2 (ja) | 1989-01-30 |
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