JPS56101526A - Electrostatic capacity type infrared ray sensor - Google Patents
Electrostatic capacity type infrared ray sensorInfo
- Publication number
- JPS56101526A JPS56101526A JP352980A JP352980A JPS56101526A JP S56101526 A JPS56101526 A JP S56101526A JP 352980 A JP352980 A JP 352980A JP 352980 A JP352980 A JP 352980A JP S56101526 A JPS56101526 A JP S56101526A
- Authority
- JP
- Japan
- Prior art keywords
- diaphragm
- silicon
- infrared ray
- ray sensor
- electrostatic capacity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 239000005388 borosilicate glass Substances 0.000 abstract 2
- 238000010168 coupling process Methods 0.000 abstract 2
- 238000003754 machining Methods 0.000 abstract 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 abstract 1
- 239000003513 alkali Substances 0.000 abstract 1
- 235000011089 carbon dioxide Nutrition 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000005259 measurement Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/37—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using pneumatic detection
Abstract
PURPOSE:To perform a stable and high accurate measurement by a method wherein a silicon diaphragm to which a precise machining can be applied and an electrostatic coupling are adopted. CONSTITUTION:A diaphragm 9 is obtained from a silicon plate having a crystal plane for example of a (100) plane applied with a precise machining by means of an alkali etching method, and it is displaced to the right or the left according to a quantity of light of infrared rays irradiated into the left or the right chamber sealed with carbonic acid gas. A fixed electrode 10 is formed by coating a borosilicate glass 11 with an Au group thin film by means of an evaparation method. The space between the diaphragm 9 and the fixed electrode 10 becomes a dimension of the concave part of the silicon diaphragm 9. The diaphragm 9 is coupled with the borosilicate glass 11, 11' by means of the electrostatic coupling method which is a non distortion bonding technique.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP352980A JPS56101526A (en) | 1980-01-18 | 1980-01-18 | Electrostatic capacity type infrared ray sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP352980A JPS56101526A (en) | 1980-01-18 | 1980-01-18 | Electrostatic capacity type infrared ray sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56101526A true JPS56101526A (en) | 1981-08-14 |
Family
ID=11559908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP352980A Pending JPS56101526A (en) | 1980-01-18 | 1980-01-18 | Electrostatic capacity type infrared ray sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56101526A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993004346A1 (en) * | 1991-08-23 | 1993-03-04 | Kidde-Graviner Limited | Flame sensors and methods of sensing flame |
-
1980
- 1980-01-18 JP JP352980A patent/JPS56101526A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1993004346A1 (en) * | 1991-08-23 | 1993-03-04 | Kidde-Graviner Limited | Flame sensors and methods of sensing flame |
| GB2273156A (en) * | 1991-08-23 | 1994-06-08 | Graviner Ltd Kidde | Flame sensors and methods of sensing flame |
| GB2273156B (en) * | 1991-08-23 | 1995-07-12 | Graviner Ltd Kidde | Flame sensors and methods of sensing flame |
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