JPS5599785A - Solid oscillator element - Google Patents

Solid oscillator element

Info

Publication number
JPS5599785A
JPS5599785A JP723279A JP723279A JPS5599785A JP S5599785 A JPS5599785 A JP S5599785A JP 723279 A JP723279 A JP 723279A JP 723279 A JP723279 A JP 723279A JP S5599785 A JPS5599785 A JP S5599785A
Authority
JP
Japan
Prior art keywords
layer
substrate
high concentration
ohmic electrodes
diameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP723279A
Other languages
Japanese (ja)
Inventor
Haruo Kakuwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP723279A priority Critical patent/JPS5599785A/en
Publication of JPS5599785A publication Critical patent/JPS5599785A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To maintain constant the operating current variation due to the irregularity of areas by a method wherein, by selectively etching a low impurity concentration n-layer on a substrate, an n+-layer of thickness less than that of the n-layer is formed on it, and ohmic electrodes are provided on the selectively formed n+-layer and substrate n+-layer.
CONSTITUTION: By lapping and chemical treatment, one side of high concentration GaAs substrate 6 is made into a clean surface. By the gaseous-phase epitaxial growth method , active layer 5, of thickness corresponding to the oscillation frequency, is grown, and an oixde film is formed on the surface. A window is opened, and a dose of silicon or selenium 2∼3×1013 at 250 keV, is injected. Further, by operating heat treatment at 800°C for 20min, the low concentration layer at the opening is converted into n+-high concentration layer 7. After removing the oxide film, ohmic electrodes 8a and 8b are provided on layer 7 and substarte 6. By this, the whole wafer is formed evenly to the diameter determined by the diameter of the oxide filim.
COPYRIGHT: (C)1980,JPO&Japio
JP723279A 1979-01-26 1979-01-26 Solid oscillator element Pending JPS5599785A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP723279A JPS5599785A (en) 1979-01-26 1979-01-26 Solid oscillator element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP723279A JPS5599785A (en) 1979-01-26 1979-01-26 Solid oscillator element

Publications (1)

Publication Number Publication Date
JPS5599785A true JPS5599785A (en) 1980-07-30

Family

ID=11660241

Family Applications (1)

Application Number Title Priority Date Filing Date
JP723279A Pending JPS5599785A (en) 1979-01-26 1979-01-26 Solid oscillator element

Country Status (1)

Country Link
JP (1) JPS5599785A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112017001786T5 (en) 2016-03-31 2018-12-13 Ngk Insulators, Ltd. Monolithic separation membrane structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112017001786T5 (en) 2016-03-31 2018-12-13 Ngk Insulators, Ltd. Monolithic separation membrane structure

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