JPS5599785A - Solid oscillator element - Google Patents
Solid oscillator elementInfo
- Publication number
- JPS5599785A JPS5599785A JP723279A JP723279A JPS5599785A JP S5599785 A JPS5599785 A JP S5599785A JP 723279 A JP723279 A JP 723279A JP 723279 A JP723279 A JP 723279A JP S5599785 A JPS5599785 A JP S5599785A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- high concentration
- ohmic electrodes
- diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To maintain constant the operating current variation due to the irregularity of areas by a method wherein, by selectively etching a low impurity concentration n-layer on a substrate, an n+-layer of thickness less than that of the n-layer is formed on it, and ohmic electrodes are provided on the selectively formed n+-layer and substrate n+-layer.
CONSTITUTION: By lapping and chemical treatment, one side of high concentration GaAs substrate 6 is made into a clean surface. By the gaseous-phase epitaxial growth method , active layer 5, of thickness corresponding to the oscillation frequency, is grown, and an oixde film is formed on the surface. A window is opened, and a dose of silicon or selenium 2∼3×1013 at 250 keV, is injected. Further, by operating heat treatment at 800°C for 20min, the low concentration layer at the opening is converted into n+-high concentration layer 7. After removing the oxide film, ohmic electrodes 8a and 8b are provided on layer 7 and substarte 6. By this, the whole wafer is formed evenly to the diameter determined by the diameter of the oxide filim.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP723279A JPS5599785A (en) | 1979-01-26 | 1979-01-26 | Solid oscillator element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP723279A JPS5599785A (en) | 1979-01-26 | 1979-01-26 | Solid oscillator element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5599785A true JPS5599785A (en) | 1980-07-30 |
Family
ID=11660241
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP723279A Pending JPS5599785A (en) | 1979-01-26 | 1979-01-26 | Solid oscillator element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5599785A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112017001786T5 (en) | 2016-03-31 | 2018-12-13 | Ngk Insulators, Ltd. | Monolithic separation membrane structure |
-
1979
- 1979-01-26 JP JP723279A patent/JPS5599785A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112017001786T5 (en) | 2016-03-31 | 2018-12-13 | Ngk Insulators, Ltd. | Monolithic separation membrane structure |
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