JPS559316A - Manufacturing light conductive target - Google Patents

Manufacturing light conductive target

Info

Publication number
JPS559316A
JPS559316A JP8085178A JP8085178A JPS559316A JP S559316 A JPS559316 A JP S559316A JP 8085178 A JP8085178 A JP 8085178A JP 8085178 A JP8085178 A JP 8085178A JP S559316 A JPS559316 A JP S559316A
Authority
JP
Japan
Prior art keywords
lead monoxide
monoxide
lead
silicon dioxide
light conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8085178A
Other languages
Japanese (ja)
Inventor
Hiroshi Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8085178A priority Critical patent/JPS559316A/en
Publication of JPS559316A publication Critical patent/JPS559316A/en
Pending legal-status Critical Current

Links

Landscapes

  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To form a desired i-type conductive layer with excellent reproducibility by evoporating lead monoxide at a low crucible temperature by adding silicon dioxide into lead monoxide and decreasing the melting temperature of lead monoxide.
CONSTITUTION: In forming a light conducting target by evoporating lead monoxide on a base material, the evoporation is made after 0.1 to 10 weight percent of silicon dioxide is added into lead monoxide. Since the melting temperature of lead monoxide is strikingly decreased by the addition of silicon dioxide, the evoporation of lead monoxide can be made at the lower temperature, whereby a desired i-type conductive layer can be formed with excellent reproducibility, and a lead-monoxide light conductive target with excellent properties can be obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP8085178A 1978-07-05 1978-07-05 Manufacturing light conductive target Pending JPS559316A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8085178A JPS559316A (en) 1978-07-05 1978-07-05 Manufacturing light conductive target

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8085178A JPS559316A (en) 1978-07-05 1978-07-05 Manufacturing light conductive target

Publications (1)

Publication Number Publication Date
JPS559316A true JPS559316A (en) 1980-01-23

Family

ID=13729843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8085178A Pending JPS559316A (en) 1978-07-05 1978-07-05 Manufacturing light conductive target

Country Status (1)

Country Link
JP (1) JPS559316A (en)

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