JPS5586119A - Ion irradiation - Google Patents
Ion irradiationInfo
- Publication number
- JPS5586119A JPS5586119A JP15870678A JP15870678A JPS5586119A JP S5586119 A JPS5586119 A JP S5586119A JP 15870678 A JP15870678 A JP 15870678A JP 15870678 A JP15870678 A JP 15870678A JP S5586119 A JPS5586119 A JP S5586119A
- Authority
- JP
- Japan
- Prior art keywords
- slit
- tapered
- ion
- etch
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To carry out a tapered etching by a method wherein a cross electromagnetic field along an annular slit limited by an electrode is induced, a plasma is generated to ion irradiation, during which an incident angle of ion is changed.
CONSTITUTION: An annular slit 20 of a box-type plate 19 is provided with rectangular beam extracting ports 21a, 21b, and a beam 23 is released deflectively left and right at equal angles to irradiate an object 24 to etch. A numerical symbol 22 indicates a permanent magnet. C2F6 is introduced in a vessel and where a high voltage is impressed between anode 27 and cathode 19, there produced is a cross electromagnetic field near the slit 20, a plasma is produced along the slit, and thus two rectangular reactive ion beam fluxes having mutually reverse components are released from the holes 21a, 21b. The object to etch is rotated in the plane and the beam fluxes are scanned simultaneously in the short side direction to unify irradiation. A sharply tapered mesa type pattern is obtained from impressing high voltage, and a gently tapered one is obtained from impressing lower voltage.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15870678A JPS5586119A (en) | 1978-12-25 | 1978-12-25 | Ion irradiation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15870678A JPS5586119A (en) | 1978-12-25 | 1978-12-25 | Ion irradiation |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5586119A true JPS5586119A (en) | 1980-06-28 |
Family
ID=15677569
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15870678A Pending JPS5586119A (en) | 1978-12-25 | 1978-12-25 | Ion irradiation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5586119A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4590042A (en) * | 1984-12-24 | 1986-05-20 | Tegal Corporation | Plasma reactor having slotted manifold |
US5015331A (en) * | 1988-08-30 | 1991-05-14 | Matrix Integrated Systems | Method of plasma etching with parallel plate reactor having a grid |
US5209803A (en) * | 1988-08-30 | 1993-05-11 | Matrix Integrated Systems, Inc. | Parallel plate reactor and method of use |
-
1978
- 1978-12-25 JP JP15870678A patent/JPS5586119A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4590042A (en) * | 1984-12-24 | 1986-05-20 | Tegal Corporation | Plasma reactor having slotted manifold |
US5015331A (en) * | 1988-08-30 | 1991-05-14 | Matrix Integrated Systems | Method of plasma etching with parallel plate reactor having a grid |
US5209803A (en) * | 1988-08-30 | 1993-05-11 | Matrix Integrated Systems, Inc. | Parallel plate reactor and method of use |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0283519A4 (en) | Ion generation apparatus, thin film formation apparatus using the ion generation apparatus, and ion source. | |
EP0334184B1 (en) | Microwave ion source | |
EP0285668A4 (en) | Thin film formation apparatus | |
EP0385708A3 (en) | Beam pattern control system for an ion implanter | |
JPS5586119A (en) | Ion irradiation | |
JPS5694630A (en) | Etching method using ion-beam | |
JPS52143776A (en) | Electron beam exposure apparatus | |
US11948781B2 (en) | Apparatus and system including high angle extraction optics | |
CN111986974A (en) | Magnetic confinement system and method for electron beam plasma source assisted plasma source | |
JPS6424422A (en) | Formation of fine pattern | |
JPS54111280A (en) | Selective ion injection method | |
JPS5685813A (en) | Manufacture of magnetic bubble element | |
JPS628522A (en) | Ion-beam etching apparatus | |
JPS56152969A (en) | Ion etching apparatus | |
JPS5562170A (en) | Ion-etching method | |
JPS6453422A (en) | Dry etching device | |
JPH0681152A (en) | Plasma treating device | |
JP2507992B2 (en) | Ion gun | |
JPS6442130A (en) | Sputter etching device | |
JP3962965B2 (en) | Neutral beam injection device and ion beam process device for ion source and fusion reactor | |
JPS56137636A (en) | Ion etching method | |
JPS5635343A (en) | System for removing foreign object from cathode-ray tube | |
JPS6220227A (en) | Ion source | |
JPS57154833A (en) | Etching method by reactive ion | |
JPS5694629A (en) | Etching method using ion-beam |