JPS5586119A - Ion irradiation - Google Patents

Ion irradiation

Info

Publication number
JPS5586119A
JPS5586119A JP15870678A JP15870678A JPS5586119A JP S5586119 A JPS5586119 A JP S5586119A JP 15870678 A JP15870678 A JP 15870678A JP 15870678 A JP15870678 A JP 15870678A JP S5586119 A JPS5586119 A JP S5586119A
Authority
JP
Japan
Prior art keywords
slit
beam
ion
tapered
21b
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15870678A
Inventor
Yasuhiro Horiike
Takashi Yamazaki
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP15870678A priority Critical patent/JPS5586119A/en
Publication of JPS5586119A publication Critical patent/JPS5586119A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To carry out a tapered etching by a method wherein a cross electromagnetic field along an annular slit limited by an electrode is induced, a plasma is generated to ion irradiation, during which an incident angle of ion is changed.
CONSTITUTION: An annular slit 20 of a box-type plate 19 is provided with rectangular beam extracting ports 21a, 21b, and a beam 23 is released deflectively left and right at equal angles to irradiate an object 24 to etch. A numerical symbol 22 indicates a permanent magnet. C2F6 is introduced in a vessel and where a high voltage is impressed between anode 27 and cathode 19, there produced is a cross electromagnetic field near the slit 20, a plasma is produced along the slit, and thus two rectangular reactive ion beam fluxes having mutually reverse components are released from the holes 21a, 21b. The object to etch is rotated in the plane and the beam fluxes are scanned simultaneously in the short side direction to unify irradiation. A sharply tapered mesa type pattern is obtained from impressing high voltage, and a gently tapered one is obtained from impressing lower voltage.
COPYRIGHT: (C)1980,JPO&Japio
JP15870678A 1978-12-25 1978-12-25 Ion irradiation Pending JPS5586119A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15870678A JPS5586119A (en) 1978-12-25 1978-12-25 Ion irradiation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15870678A JPS5586119A (en) 1978-12-25 1978-12-25 Ion irradiation

Publications (1)

Publication Number Publication Date
JPS5586119A true JPS5586119A (en) 1980-06-28

Family

ID=15677569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15870678A Pending JPS5586119A (en) 1978-12-25 1978-12-25 Ion irradiation

Country Status (1)

Country Link
JP (1) JPS5586119A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4590042A (en) * 1984-12-24 1986-05-20 Tegal Corporation Plasma reactor having slotted manifold
US5015331A (en) * 1988-08-30 1991-05-14 Matrix Integrated Systems Method of plasma etching with parallel plate reactor having a grid
US5209803A (en) * 1988-08-30 1993-05-11 Matrix Integrated Systems, Inc. Parallel plate reactor and method of use

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4590042A (en) * 1984-12-24 1986-05-20 Tegal Corporation Plasma reactor having slotted manifold
US5015331A (en) * 1988-08-30 1991-05-14 Matrix Integrated Systems Method of plasma etching with parallel plate reactor having a grid
US5209803A (en) * 1988-08-30 1993-05-11 Matrix Integrated Systems, Inc. Parallel plate reactor and method of use

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