JPS5550378B2 - - Google Patents
Info
- Publication number
- JPS5550378B2 JPS5550378B2 JP10574675A JP10574675A JPS5550378B2 JP S5550378 B2 JPS5550378 B2 JP S5550378B2 JP 10574675 A JP10574675 A JP 10574675A JP 10574675 A JP10574675 A JP 10574675A JP S5550378 B2 JPS5550378 B2 JP S5550378B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10574675A JPS5229171A (en) | 1975-08-30 | 1975-08-30 | Process for crowing semiconductor crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10574675A JPS5229171A (en) | 1975-08-30 | 1975-08-30 | Process for crowing semiconductor crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5229171A JPS5229171A (en) | 1977-03-04 |
| JPS5550378B2 true JPS5550378B2 (ru) | 1980-12-17 |
Family
ID=14415812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10574675A Granted JPS5229171A (en) | 1975-08-30 | 1975-08-30 | Process for crowing semiconductor crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5229171A (ru) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5558519A (en) * | 1978-10-24 | 1980-05-01 | Nec Corp | Vapor phase growth of 3-v group compound semiconductor |
| JPS5635411A (en) * | 1979-08-31 | 1981-04-08 | Fujitsu Ltd | Epitaxial wafer of gallium arsenide and its manufacture |
| JPH0658881B2 (ja) * | 1986-02-25 | 1994-08-03 | 株式会社トーキン | 気相成長層中への均一なド−ピング方法 |
| JPH0641398B2 (ja) * | 1989-06-26 | 1994-06-01 | 信越半導体株式会社 | 半導体ウェーハの製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4946103A (ru) * | 1972-09-14 | 1974-05-02 |
-
1975
- 1975-08-30 JP JP10574675A patent/JPS5229171A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4946103A (ru) * | 1972-09-14 | 1974-05-02 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5229171A (en) | 1977-03-04 |