JPS55501202A - - Google Patents

Info

Publication number
JPS55501202A
JPS55501202A JP50048480A JP50048480A JPS55501202A JP S55501202 A JPS55501202 A JP S55501202A JP 50048480 A JP50048480 A JP 50048480A JP 50048480 A JP50048480 A JP 50048480A JP S55501202 A JPS55501202 A JP S55501202A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50048480A
Other languages
Japanese (ja)
Other versions
JPS6236384B2 (en:Method
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS55501202A publication Critical patent/JPS55501202A/ja
Publication of JPS6236384B2 publication Critical patent/JPS6236384B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6312—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H10P95/904—Thermal treatments, e.g. annealing or sintering of Group III-V semiconductors

Landscapes

  • Formation Of Insulating Films (AREA)
JP55500484A 1979-02-14 1980-01-31 Expired JPS6236384B2 (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/012,192 US4246296A (en) 1979-02-14 1979-02-14 Controlling the properties of native films using selective growth chemistry

Publications (2)

Publication Number Publication Date
JPS55501202A true JPS55501202A (en:Method) 1980-12-25
JPS6236384B2 JPS6236384B2 (en:Method) 1987-08-06

Family

ID=21753790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55500484A Expired JPS6236384B2 (en:Method) 1979-02-14 1980-01-31

Country Status (5)

Country Link
US (1) US4246296A (en:Method)
EP (1) EP0023911B1 (en:Method)
JP (1) JPS6236384B2 (en:Method)
DE (1) DE3070692D1 (en:Method)
WO (1) WO1980001738A1 (en:Method)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04234121A (ja) * 1990-09-20 1992-08-21 American Teleph & Telegr Co <Att> 集積回路デバイスの製造方法
JPH06177123A (ja) * 1990-07-19 1994-06-24 American Teleph & Telegr Co <Att> 絶縁体の堆積方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5662328A (en) * 1979-10-26 1981-05-28 Agency Of Ind Science & Technol Manufacturing of insulation membrane and insulation membrane-semiconductor interface
US4421785A (en) * 1980-08-18 1983-12-20 Sperry Corporation Superconductive tunnel junction device and method of manufacture
US4368550A (en) * 1981-04-10 1983-01-18 Stevens Gunther A Method and apparatus for winterizing a swimming pool
US4544418A (en) * 1984-04-16 1985-10-01 Gibbons James F Process for high temperature surface reactions in semiconductor material
US4588451A (en) * 1984-04-27 1986-05-13 Advanced Energy Fund Limited Partnership Metal organic chemical vapor deposition of 111-v compounds on silicon
DE4017870A1 (de) * 1990-06-02 1991-12-05 Standard Elektrik Lorenz Ag Verfahren zur herstellung und passivierung von halbleiterbauelementen
JPH0883902A (ja) * 1994-09-09 1996-03-26 Mitsubishi Electric Corp 半導体装置の製造方法、及び半導体装置
US5563105A (en) * 1994-09-30 1996-10-08 International Business Machines Corporation PECVD method of depositing fluorine doped oxide using a fluorine precursor containing a glass-forming element
JPH09139494A (ja) * 1995-11-16 1997-05-27 Mitsubishi Electric Corp 半導体装置の製造方法，及び半導体装置
JP3489334B2 (ja) * 1996-05-27 2004-01-19 ソニー株式会社 半導体装置の酸化膜形成方法および酸化膜形成装置
US5872031A (en) * 1996-11-27 1999-02-16 The Regents Of The University Of California Enhancement-depletion logic based on gaas mosfets
US6472695B1 (en) 1999-06-18 2002-10-29 The Regents Of The University Of California Increased lateral oxidation rate of aluminum indium arsenide

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB991263A (en) * 1963-02-15 1965-05-05 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
US3287243A (en) * 1965-03-29 1966-11-22 Bell Telephone Labor Inc Deposition of insulating films by cathode sputtering in an rf-supported discharge
US3692571A (en) * 1970-11-12 1972-09-19 Northern Electric Co Method of reducing the mobile ion contamination in thermally grown silicon dioxide
US3849276A (en) * 1971-03-19 1974-11-19 Ibm Process for forming reactive layers whose thickness is independent of time
US3890169A (en) * 1973-03-26 1975-06-17 Bell Telephone Labor Inc Method of forming stable native oxide on gallium arsenide based compound semiconductors by combined drying and annealing
US3914465A (en) * 1972-09-25 1975-10-21 Bell Telephone Labor Inc Surface passivation of GaAs junction laser devices
US3907616A (en) * 1972-11-15 1975-09-23 Texas Instruments Inc Method of forming doped dielectric layers utilizing reactive plasma deposition
US4062747A (en) * 1976-06-15 1977-12-13 Bell Telephone Laboratories, Incorporated Native growth of semiconductor oxide layers
US4170666A (en) * 1977-05-11 1979-10-09 Rockwell International Corporation Method for reducing surface recombination velocities in III-V compound semiconductors
US4172906A (en) * 1977-05-11 1979-10-30 Rockwell International Corporation Method for passivating III-V compound semiconductors
US4144634A (en) * 1977-06-28 1979-03-20 Bell Telephone Laboratories, Incorporated Fabrication of gallium arsenide MOS devices
US4183780A (en) * 1978-08-21 1980-01-15 International Business Machines Corporation Photon enhanced reactive ion etching

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06177123A (ja) * 1990-07-19 1994-06-24 American Teleph & Telegr Co <Att> 絶縁体の堆積方法
JPH04234121A (ja) * 1990-09-20 1992-08-21 American Teleph & Telegr Co <Att> 集積回路デバイスの製造方法

Also Published As

Publication number Publication date
EP0023911B1 (en) 1985-05-29
EP0023911A4 (en) 1983-03-15
EP0023911A1 (en) 1981-02-18
DE3070692D1 (en) 1985-07-04
JPS6236384B2 (en:Method) 1987-08-06
US4246296A (en) 1981-01-20
WO1980001738A1 (en) 1980-08-21

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