JPS5541748A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- JPS5541748A JPS5541748A JP11497578A JP11497578A JPS5541748A JP S5541748 A JPS5541748 A JP S5541748A JP 11497578 A JP11497578 A JP 11497578A JP 11497578 A JP11497578 A JP 11497578A JP S5541748 A JPS5541748 A JP S5541748A
- Authority
- JP
- Japan
- Prior art keywords
- iron
- ultraviolet light
- memory device
- nickel
- mass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Non-Volatile Memory (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
PURPOSE: To improve the effects of a semiconductor memory device in information erasing by use of ultraviolet irradiation by enclosing into a transparent resin mass at least a portion of the memory element which faces the ultraviolet light irradiation.
CONSTITUTION: A semiconductor element 2 is mounted on a supporting member 10 composed of an iron-nickel-cobalt alloy or an iron-nickel alloy, with each of its ends constituting an electrode 6 being connected to an externally leading terminal 11 composed of an iron-nickel alloy by use of a bonding wire 12. Then a mass of resin 13, which is an electrically insulating epoxy resin having ultraviolet light permeability, is provided to enclose all these components excluding the external portion of the terminal 11. This device is advantaged in the determination of not only spiral flow before and after heat working and specific gravity, coefficient of expansion and glass transition point after heat working, but also other properties such as the amount and the refractive index of Na ions and Ca ions contained.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11497578A JPS5541748A (en) | 1978-09-18 | 1978-09-18 | Semiconductor memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11497578A JPS5541748A (en) | 1978-09-18 | 1978-09-18 | Semiconductor memory device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5541748A true JPS5541748A (en) | 1980-03-24 |
Family
ID=14651250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11497578A Pending JPS5541748A (en) | 1978-09-18 | 1978-09-18 | Semiconductor memory device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5541748A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5730351A (en) * | 1980-07-30 | 1982-02-18 | Nec Corp | Resin-sealed type semiconductor device |
| JPS58137219A (en) * | 1982-02-09 | 1983-08-15 | Nec Corp | Preparation of resin sealed type semiconductor device |
| JPS58207656A (en) * | 1982-05-28 | 1983-12-03 | Fujitsu Ltd | Resin-sealed type semiconductor device |
| US4460915A (en) * | 1981-12-28 | 1984-07-17 | Intel Corporation | Plastic package for radiation sensitive semiconductor devices |
| JPS62156842A (en) * | 1985-12-20 | 1987-07-11 | エツセジ−エツセ ミクロエレツトロニカ ソチエタ ペル アノニマ | Eprom semiconductor device which is erasable by ultraviolet rays and manufacture of the same |
-
1978
- 1978-09-18 JP JP11497578A patent/JPS5541748A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5730351A (en) * | 1980-07-30 | 1982-02-18 | Nec Corp | Resin-sealed type semiconductor device |
| US4460915A (en) * | 1981-12-28 | 1984-07-17 | Intel Corporation | Plastic package for radiation sensitive semiconductor devices |
| JPS58137219A (en) * | 1982-02-09 | 1983-08-15 | Nec Corp | Preparation of resin sealed type semiconductor device |
| JPS6314494B2 (en) * | 1982-02-09 | 1988-03-31 | Nippon Electric Co | |
| JPS58207656A (en) * | 1982-05-28 | 1983-12-03 | Fujitsu Ltd | Resin-sealed type semiconductor device |
| JPH0312467B2 (en) * | 1982-05-28 | 1991-02-20 | Fujitsu Ltd | |
| JPS62156842A (en) * | 1985-12-20 | 1987-07-11 | エツセジ−エツセ ミクロエレツトロニカ ソチエタ ペル アノニマ | Eprom semiconductor device which is erasable by ultraviolet rays and manufacture of the same |
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