JPS553826B2 - - Google Patents
Info
- Publication number
- JPS553826B2 JPS553826B2 JP12686672A JP12686672A JPS553826B2 JP S553826 B2 JPS553826 B2 JP S553826B2 JP 12686672 A JP12686672 A JP 12686672A JP 12686672 A JP12686672 A JP 12686672A JP S553826 B2 JPS553826 B2 JP S553826B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12686672A JPS553826B2 (en:Method) | 1972-12-18 | 1972-12-18 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12686672A JPS553826B2 (en:Method) | 1972-12-18 | 1972-12-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4984375A JPS4984375A (en:Method) | 1974-08-13 |
| JPS553826B2 true JPS553826B2 (en:Method) | 1980-01-26 |
Family
ID=14945761
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12686672A Expired JPS553826B2 (en:Method) | 1972-12-18 | 1972-12-18 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS553826B2 (en:Method) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1114735A (ja) * | 1997-06-25 | 1999-01-22 | Toshiba Corp | Ｓｒａ方式のレーダ装置 |
| JP2013062545A (ja) * | 1996-07-16 | 2013-04-04 | Cree Inc | 電圧吸収エッジを有するｐｎ接合を含むＳｉＣ半導体コンポーネント |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4242690A (en) * | 1978-06-06 | 1980-12-30 | General Electric Company | High breakdown voltage semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3404295A (en) * | 1964-11-30 | 1968-10-01 | Motorola Inc | High frequency and voltage transistor with added region for punch-through protection |
-
1972
- 1972-12-18 JP JP12686672A patent/JPS553826B2/ja not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013062545A (ja) * | 1996-07-16 | 2013-04-04 | Cree Inc | 電圧吸収エッジを有するｐｎ接合を含むＳｉＣ半導体コンポーネント |
| JPH1114735A (ja) * | 1997-06-25 | 1999-01-22 | Toshiba Corp | Ｓｒａ方式のレーダ装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4984375A (en:Method) | 1974-08-13 |