JPS553826B2 - - Google Patents

Info

Publication number
JPS553826B2
JPS553826B2 JP12686672A JP12686672A JPS553826B2 JP S553826 B2 JPS553826 B2 JP S553826B2 JP 12686672 A JP12686672 A JP 12686672A JP 12686672 A JP12686672 A JP 12686672A JP S553826 B2 JPS553826 B2 JP S553826B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12686672A
Other versions
JPS4984375A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12686672A priority Critical patent/JPS553826B2/ja
Publication of JPS4984375A publication Critical patent/JPS4984375A/ja
Publication of JPS553826B2 publication Critical patent/JPS553826B2/ja
Expired legal-status Critical Current

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Landscapes

  • Bipolar Transistors (AREA)
JP12686672A 1972-12-18 1972-12-18 Expired JPS553826B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12686672A JPS553826B2 (ja) 1972-12-18 1972-12-18

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12686672A JPS553826B2 (ja) 1972-12-18 1972-12-18

Publications (2)

Publication Number Publication Date
JPS4984375A JPS4984375A (ja) 1974-08-13
JPS553826B2 true JPS553826B2 (ja) 1980-01-26

Family

ID=14945761

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12686672A Expired JPS553826B2 (ja) 1972-12-18 1972-12-18

Country Status (1)

Country Link
JP (1) JPS553826B2 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1114735A (ja) * 1997-06-25 1999-01-22 Toshiba Corp Ｓｒａ方式のレーダ装置
JP2013062545A (ja) * 1996-07-16 2013-04-04 Cree Inc 電圧吸収エッジを有するｐｎ接合を含むＳｉＣ半導体コンポーネント

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4242690A (en) * 1978-06-06 1980-12-30 General Electric Company High breakdown voltage semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3404295A (en) * 1964-11-30 1968-10-01 Motorola Inc High frequency and voltage transistor with added region for punch-through protection

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3404295A (en) * 1964-11-30 1968-10-01 Motorola Inc High frequency and voltage transistor with added region for punch-through protection

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013062545A (ja) * 1996-07-16 2013-04-04 Cree Inc 電圧吸収エッジを有するｐｎ接合を含むＳｉＣ半導体コンポーネント
JPH1114735A (ja) * 1997-06-25 1999-01-22 Toshiba Corp Ｓｒａ方式のレーダ装置

Also Published As

Publication number Publication date
JPS4984375A (ja) 1974-08-13

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