JPS5537107A - Separator of thresher - Google Patents
Separator of thresherInfo
- Publication number
- JPS5537107A JPS5537107A JP10814778A JP10814778A JPS5537107A JP S5537107 A JPS5537107 A JP S5537107A JP 10814778 A JP10814778 A JP 10814778A JP 10814778 A JP10814778 A JP 10814778A JP S5537107 A JPS5537107 A JP S5537107A
- Authority
- JP
- Japan
- Prior art keywords
- thresher
- separator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Threshing Machine Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10814778A JPS5537107A (en) | 1978-09-05 | 1978-09-05 | Separator of thresher |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10814778A JPS5537107A (en) | 1978-09-05 | 1978-09-05 | Separator of thresher |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5537107A true JPS5537107A (en) | 1980-03-15 |
Family
ID=14477123
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10814778A Pending JPS5537107A (en) | 1978-09-05 | 1978-09-05 | Separator of thresher |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5537107A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5391585A (en) * | 1977-04-04 | 1978-08-11 | Agency Of Ind Science & Technol | Nonvolatile field effect transistor |
JPS5743473A (en) * | 1981-07-11 | 1982-03-11 | Agency Of Ind Science & Technol | Non-volatile memory with high impurity density region |
JPS5743472A (en) * | 1981-07-11 | 1982-03-11 | Agency Of Ind Science & Technol | Partial gate type non-volatile memory |
JPS57167682A (en) * | 1982-03-24 | 1982-10-15 | Agency Of Ind Science & Technol | Avalanche breakdown injection type field-effect transistor |
-
1978
- 1978-09-05 JP JP10814778A patent/JPS5537107A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5391585A (en) * | 1977-04-04 | 1978-08-11 | Agency Of Ind Science & Technol | Nonvolatile field effect transistor |
JPS6252475B2 (en) * | 1977-04-04 | 1987-11-05 | Kogyo Gijutsuin | |
JPS5743473A (en) * | 1981-07-11 | 1982-03-11 | Agency Of Ind Science & Technol | Non-volatile memory with high impurity density region |
JPS5743472A (en) * | 1981-07-11 | 1982-03-11 | Agency Of Ind Science & Technol | Partial gate type non-volatile memory |
JPH0228905B2 (en) * | 1981-07-11 | 1990-06-27 | Kogyo Gijutsuin | |
JPS57167682A (en) * | 1982-03-24 | 1982-10-15 | Agency Of Ind Science & Technol | Avalanche breakdown injection type field-effect transistor |
JPH0353788B2 (en) * | 1982-03-24 | 1991-08-16 |
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