JPS5533071A - Magnetism-sensitive semiconductor device and method of trimming the same - Google Patents

Magnetism-sensitive semiconductor device and method of trimming the same

Info

Publication number
JPS5533071A
JPS5533071A JP10615678A JP10615678A JPS5533071A JP S5533071 A JPS5533071 A JP S5533071A JP 10615678 A JP10615678 A JP 10615678A JP 10615678 A JP10615678 A JP 10615678A JP S5533071 A JPS5533071 A JP S5533071A
Authority
JP
Japan
Prior art keywords
trimming
magnetic field
zero
semiconductor device
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10615678A
Other languages
Japanese (ja)
Inventor
Kazufumi Yamaguchi
Isao Fujimoto
Hiroshi Koide
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP10615678A priority Critical patent/JPS5533071A/en
Publication of JPS5533071A publication Critical patent/JPS5533071A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To provide a switching hall IC operating in low magnetic field by so trimming an emitter resistor that the output of a differential amplifier become zero in zero magnetic field.
CONSTITUTION: The output of a hall element H is amplified by differential transistor amplifiers Q1∼Q6. Resistors RT1∼RR3 are trimming resistor formed capably of connecting parallel with the emitter resistors RE1, RE2 of the transistors Q1, Q2, respectively to trim the correcting width in resolution of 2n steps so as to thus correct the offset voltage of Voff at maximum. When current is applied to pads P1∼P6 to short or select any of zener diodes A1∼Z5 to thereby prepare 8 resistances. According to this method, the zener diode is shorted or aluminum wire is cut in short time so that the output terminal voltage of the amplifier becomes zero in the zero magnetic field to conveniently control the offset of the amplifier and the semiconductor device.
COPYRIGHT: (C)1980,JPO&Japio
JP10615678A 1978-08-29 1978-08-29 Magnetism-sensitive semiconductor device and method of trimming the same Pending JPS5533071A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10615678A JPS5533071A (en) 1978-08-29 1978-08-29 Magnetism-sensitive semiconductor device and method of trimming the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10615678A JPS5533071A (en) 1978-08-29 1978-08-29 Magnetism-sensitive semiconductor device and method of trimming the same

Publications (1)

Publication Number Publication Date
JPS5533071A true JPS5533071A (en) 1980-03-08

Family

ID=14426437

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10615678A Pending JPS5533071A (en) 1978-08-29 1978-08-29 Magnetism-sensitive semiconductor device and method of trimming the same

Country Status (1)

Country Link
JP (1) JPS5533071A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0351714A (en) * 1989-07-20 1991-03-06 Hitachi Ltd Sensor apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0351714A (en) * 1989-07-20 1991-03-06 Hitachi Ltd Sensor apparatus

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