JPS5532772A - Cubic system boron nitride and production thereof - Google Patents

Cubic system boron nitride and production thereof

Info

Publication number
JPS5532772A
JPS5532772A JP10651978A JP10651978A JPS5532772A JP S5532772 A JPS5532772 A JP S5532772A JP 10651978 A JP10651978 A JP 10651978A JP 10651978 A JP10651978 A JP 10651978A JP S5532772 A JPS5532772 A JP S5532772A
Authority
JP
Japan
Prior art keywords
boron nitride
container
system boron
nitride
hexagonal system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10651978A
Other languages
Japanese (ja)
Other versions
JPS5637200B2 (en
Inventor
Shigeharu Naka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Priority to JP10651978A priority Critical patent/JPS5532772A/en
Publication of JPS5532772A publication Critical patent/JPS5532772A/en
Publication of JPS5637200B2 publication Critical patent/JPS5637200B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/12—Single-crystal growth directly from the solid state by pressure treatment during the growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides

Abstract

PURPOSE:To obtain cubic system boron nitride having superior performance as a tool and superior sintering property at high temp. by removing aluminum nitride and unreacted hexagonal system boron nitride from the reaction product of hexagonal system boron nitride and aluminum nitride. CONSTITUTION:A mixt. of 50-95mol% hexagonal system boron nitride and 50- 5mol% aluminum nitride is charged into a container made of aluminum oxide or the like. After adjusting the vol. of oxygen in the container to below 2vol% by replacing the atmosphere in the container with nitrogen contg. below 2vol% oxygen, the container is placed in a device of high temp. and press. and held for 1-60min at above 45 Kbar and 800 deg.C. After reducing the temp. and press. the reaction product is taken out of the container and treated with alkali to remove aluminum oxide and unreacted hexagonal system boron nitride, thus obtaining 1-50mum size cubic system single crystal boron nitride of (111) face tetrahedral structure.
JP10651978A 1978-08-31 1978-08-31 Cubic system boron nitride and production thereof Granted JPS5532772A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10651978A JPS5532772A (en) 1978-08-31 1978-08-31 Cubic system boron nitride and production thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10651978A JPS5532772A (en) 1978-08-31 1978-08-31 Cubic system boron nitride and production thereof

Publications (2)

Publication Number Publication Date
JPS5532772A true JPS5532772A (en) 1980-03-07
JPS5637200B2 JPS5637200B2 (en) 1981-08-29

Family

ID=14435645

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10651978A Granted JPS5532772A (en) 1978-08-31 1978-08-31 Cubic system boron nitride and production thereof

Country Status (1)

Country Link
JP (1) JPS5532772A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0587697U (en) * 1991-10-02 1993-11-26 守 弓矢 traffic light

Also Published As

Publication number Publication date
JPS5637200B2 (en) 1981-08-29

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