JPS552901B2 - - Google Patents
Info
- Publication number
- JPS552901B2 JPS552901B2 JP7941475A JP7941475A JPS552901B2 JP S552901 B2 JPS552901 B2 JP S552901B2 JP 7941475 A JP7941475 A JP 7941475A JP 7941475 A JP7941475 A JP 7941475A JP S552901 B2 JPS552901 B2 JP S552901B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50079414A JPS524167A (en) | 1975-06-27 | 1975-06-27 | Manufacturing process of p-n junction type solid element |
| DE2628367A DE2628367C2 (de) | 1975-06-27 | 1976-06-24 | Verfahren zur Herstellung eines Halbleiterbauelementes mit pn-Übergang |
| US05/908,748 US4161418A (en) | 1975-06-27 | 1978-05-23 | Ionized-cluster-beam deposition process for fabricating p-n junction semiconductor layers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50079414A JPS524167A (en) | 1975-06-27 | 1975-06-27 | Manufacturing process of p-n junction type solid element |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50139749A Division JPS524187A (en) | 1975-11-22 | 1975-11-22 | P-n conjunction type solid element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS524167A JPS524167A (en) | 1977-01-13 |
| JPS552901B2 true JPS552901B2 (da) | 1980-01-22 |
Family
ID=13689196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50079414A Granted JPS524167A (en) | 1975-06-27 | 1975-06-27 | Manufacturing process of p-n junction type solid element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS524167A (da) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53110973A (en) * | 1977-03-10 | 1978-09-28 | Futaba Denshi Kogyo Kk | Method and apparatus for manufacturing compounds |
| JPS5440075A (en) * | 1977-09-06 | 1979-03-28 | Futaba Denshi Kogyo Kk | Compound semiconductor wafer |
| JPS609991Y2 (ja) * | 1978-07-28 | 1985-04-06 | パイオニアビデオ株式会社 | 光学式ビデオディスクプレ−ヤ |
| JPS5752181A (en) * | 1980-09-16 | 1982-03-27 | Semiconductor Energy Lab Co Ltd | Photoelectric converter |
| WO1997045880A1 (en) * | 1996-05-28 | 1997-12-04 | Matsushita Battery Industrial Co., Ltd. | METHOD FOR FORMING CdTe FILM AND SOLAR BATTERY USING THE FILM |
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1975
- 1975-06-27 JP JP50079414A patent/JPS524167A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS524167A (en) | 1977-01-13 |