JPS5528552B2 - - Google Patents
Info
- Publication number
- JPS5528552B2 JPS5528552B2 JP13958875A JP13958875A JPS5528552B2 JP S5528552 B2 JPS5528552 B2 JP S5528552B2 JP 13958875 A JP13958875 A JP 13958875A JP 13958875 A JP13958875 A JP 13958875A JP S5528552 B2 JPS5528552 B2 JP S5528552B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
- H10D30/686—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]
Landscapes
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50139588A JPS5263686A (en) | 1975-11-20 | 1975-11-20 | Non-voltatile semiconductor memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50139588A JPS5263686A (en) | 1975-11-20 | 1975-11-20 | Non-voltatile semiconductor memory device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5263686A JPS5263686A (en) | 1977-05-26 |
| JPS5528552B2 true JPS5528552B2 (OSRAM) | 1980-07-29 |
Family
ID=15248751
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50139588A Granted JPS5263686A (en) | 1975-11-20 | 1975-11-20 | Non-voltatile semiconductor memory device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5263686A (OSRAM) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56116670A (en) * | 1980-02-20 | 1981-09-12 | Hitachi Ltd | Semiconductor integrated circuit device and manufacture thereof |
| US4667217A (en) * | 1985-04-19 | 1987-05-19 | Ncr Corporation | Two bit vertically/horizontally integrated memory cell |
| JP2600301B2 (ja) * | 1988-06-28 | 1997-04-16 | 三菱電機株式会社 | 半導体記憶装置およびその製造方法 |
| US5293328A (en) * | 1992-01-15 | 1994-03-08 | National Semiconductor Corporation | Electrically reprogrammable EPROM cell with merged transistor and optiumum area |
-
1975
- 1975-11-20 JP JP50139588A patent/JPS5263686A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5263686A (en) | 1977-05-26 |