JPS5527611A - Circuit to detect channel potential of charge transfer element - Google Patents
Circuit to detect channel potential of charge transfer elementInfo
- Publication number
- JPS5527611A JPS5527611A JP10040378A JP10040378A JPS5527611A JP S5527611 A JPS5527611 A JP S5527611A JP 10040378 A JP10040378 A JP 10040378A JP 10040378 A JP10040378 A JP 10040378A JP S5527611 A JPS5527611 A JP S5527611A
- Authority
- JP
- Japan
- Prior art keywords
- pulse
- potential
- gate
- transfer element
- charge transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76808—Input structures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Networks Using Active Elements (AREA)
Abstract
PURPOSE:To detect the channel potential of a charge transfer element, by using a circuit in which MOS transistor, which has the same base concentration as the base concentration below an electrode of a charge transfer element, is connected in series with a high-impedance element. CONSTITUTION:When a pulse is supplied to charge supply source 2, the potential becomes VSH and VSL according to the high and low levels of the pulse. In Gate G1, the level of potential V1 is determined by DC bias VIB and input signal source 4. In gate G2, the level of V2 is determined by output voltage ADJ of DC voltage shift circuit shift circuit 5. When a pulse is supplied to gate G3 from pulse supply source 6, the potential becomes V3H and V3L according to the high and low levels of the pulse. Here, when the inner potential below gate G2 is higher than V3H, the quantity of charge to be transferred to CCD is in proportion to ''V1-V3H''. But, due to the drop of VADJ, it becomes proportional to ''V1-V2''. When V1=V2, CCD is cut off.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10040378A JPS5527611A (en) | 1978-08-17 | 1978-08-17 | Circuit to detect channel potential of charge transfer element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10040378A JPS5527611A (en) | 1978-08-17 | 1978-08-17 | Circuit to detect channel potential of charge transfer element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5527611A true JPS5527611A (en) | 1980-02-27 |
| JPS5532228B2 JPS5532228B2 (en) | 1980-08-23 |
Family
ID=14273006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10040378A Granted JPS5527611A (en) | 1978-08-17 | 1978-08-17 | Circuit to detect channel potential of charge transfer element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5527611A (en) |
-
1978
- 1978-08-17 JP JP10040378A patent/JPS5527611A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5532228B2 (en) | 1980-08-23 |
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