JPS5524495A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS5524495A
JPS5524495A JP10068379A JP10068379A JPS5524495A JP S5524495 A JPS5524495 A JP S5524495A JP 10068379 A JP10068379 A JP 10068379A JP 10068379 A JP10068379 A JP 10068379A JP S5524495 A JPS5524495 A JP S5524495A
Authority
JP
Japan
Prior art keywords
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10068379A
Other languages
English (en)
Inventor
Apurasumaiyaa Ururitsuhi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5524495A publication Critical patent/JPS5524495A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817—Thyristors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41716—Cathode or anode electrodes for thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
JP10068379A 1978-08-10 1979-08-07 Thyristor Pending JPS5524495A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782835089 DE2835089A1 (de) 1978-08-10 1978-08-10 Thyristor

Publications (1)

Publication Number Publication Date
JPS5524495A true JPS5524495A (en) 1980-02-21

Family

ID=6046716

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10068379A Pending JPS5524495A (en) 1978-08-10 1979-08-07 Thyristor

Country Status (5)

Country Link
US (1) US4942444A (ja)
EP (1) EP0008008B1 (ja)
JP (1) JPS5524495A (ja)
CA (1) CA1139016A (ja)
DE (1) DE2835089A1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3018499A1 (de) * 1980-05-14 1981-11-19 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement
DE3118317A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hilfsemitterelektrode und kurzschlussgebieten sowie verfahren zu seinem betrieb
DE3118305A1 (de) * 1981-05-08 1982-12-02 Siemens AG, 1000 Berlin und 8000 München Thyristor mit verbessertem schaltverhalten sowie verfahren zu seinem betrieb
DE3118354A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitterkurzschluessen und kurzschlussgebieten sowie verfahren zu seinem betrieb
DE3370248D1 (en) * 1982-10-04 1987-04-16 Gen Electric Thyristor with turn-off capability
EP0156022B1 (de) * 1984-03-30 1989-05-31 Siemens Aktiengesellschaft Durch Feldeffekt steuerbares Halbleiterbauelement
JPS6188563A (ja) * 1984-10-08 1986-05-06 Toshiba Corp 半導体スイツチ
US6507070B1 (en) * 1996-11-25 2003-01-14 Semiconductor Components Industries Llc Semiconductor device and method of making

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL293292A (ja) * 1962-06-11
DE1439368A1 (de) * 1964-04-29 1969-02-13 Siemens Ag Halbleiterstromtor mit Zuendung durch Feldeffekt
DE1903745A1 (de) * 1969-01-25 1970-08-13 Renz Dipl Phys Albrecht Integrierbare laterale Halbleiter-Fuenfschichtstruktur
NL7003606A (ja) * 1969-03-19 1970-09-22
DE2040657C3 (de) * 1970-08-17 1975-10-02 Siemens Ag, 1000 Berlin Und 8000 Muenchen Elektronischer Schalter für Halbleiterkoppelpunkte in Fernmelde-, insbesondere Fernsprechvermittlungsanlagen
SU341378A1 (ru) * 1970-12-28 1977-07-05 Kurtajkin A I Тиристор
JPS5416839B2 (ja) * 1973-03-06 1979-06-25
US3831187A (en) * 1973-04-11 1974-08-20 Rca Corp Thyristor having capacitively coupled control electrode
US3972061A (en) * 1974-10-02 1976-07-27 National Semiconductor Corporation Monolithic lateral S.C.R. having reduced "on" resistance
JPS5185381A (ja) * 1975-01-24 1976-07-26 Hitachi Ltd
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
US4055884A (en) * 1976-12-13 1977-11-01 International Business Machines Corporation Fabrication of power field effect transistors and the resulting structures
GB1586171A (en) * 1977-01-31 1981-03-18 Rca Corp Gate turn-off device

Also Published As

Publication number Publication date
DE2835089C2 (ja) 1989-04-27
EP0008008B1 (de) 1983-01-12
US4942444A (en) 1990-07-17
DE2835089A1 (de) 1980-03-20
CA1139016A (en) 1983-01-04
EP0008008A1 (de) 1980-02-20

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