JPS5524495A - Thyristor - Google Patents
ThyristorInfo
- Publication number
- JPS5524495A JPS5524495A JP10068379A JP10068379A JPS5524495A JP S5524495 A JPS5524495 A JP S5524495A JP 10068379 A JP10068379 A JP 10068379A JP 10068379 A JP10068379 A JP 10068379A JP S5524495 A JPS5524495 A JP S5524495A
- Authority
- JP
- Japan
- Prior art keywords
- thyristor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0817—Thyristors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41716—Cathode or anode electrodes for thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19782835089 DE2835089A1 (de) | 1978-08-10 | 1978-08-10 | Thyristor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5524495A true JPS5524495A (en) | 1980-02-21 |
Family
ID=6046716
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10068379A Pending JPS5524495A (en) | 1978-08-10 | 1979-08-07 | Thyristor |
Country Status (5)
Country | Link |
---|---|
US (1) | US4942444A (ja) |
EP (1) | EP0008008B1 (ja) |
JP (1) | JPS5524495A (ja) |
CA (1) | CA1139016A (ja) |
DE (1) | DE2835089A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3018499A1 (de) * | 1980-05-14 | 1981-11-19 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterbauelement |
DE3118317A1 (de) * | 1981-05-08 | 1982-11-25 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit hilfsemitterelektrode und kurzschlussgebieten sowie verfahren zu seinem betrieb |
DE3118305A1 (de) * | 1981-05-08 | 1982-12-02 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit verbessertem schaltverhalten sowie verfahren zu seinem betrieb |
DE3118354A1 (de) * | 1981-05-08 | 1982-11-25 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit steuerbaren emitterkurzschluessen und kurzschlussgebieten sowie verfahren zu seinem betrieb |
DE3370248D1 (en) * | 1982-10-04 | 1987-04-16 | Gen Electric | Thyristor with turn-off capability |
EP0156022B1 (de) * | 1984-03-30 | 1989-05-31 | Siemens Aktiengesellschaft | Durch Feldeffekt steuerbares Halbleiterbauelement |
JPS6188563A (ja) * | 1984-10-08 | 1986-05-06 | Toshiba Corp | 半導体スイツチ |
US6507070B1 (en) * | 1996-11-25 | 2003-01-14 | Semiconductor Components Industries Llc | Semiconductor device and method of making |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL293292A (ja) * | 1962-06-11 | |||
DE1439368A1 (de) * | 1964-04-29 | 1969-02-13 | Siemens Ag | Halbleiterstromtor mit Zuendung durch Feldeffekt |
DE1903745A1 (de) * | 1969-01-25 | 1970-08-13 | Renz Dipl Phys Albrecht | Integrierbare laterale Halbleiter-Fuenfschichtstruktur |
NL7003606A (ja) * | 1969-03-19 | 1970-09-22 | ||
DE2040657C3 (de) * | 1970-08-17 | 1975-10-02 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Elektronischer Schalter für Halbleiterkoppelpunkte in Fernmelde-, insbesondere Fernsprechvermittlungsanlagen |
SU341378A1 (ru) * | 1970-12-28 | 1977-07-05 | Kurtajkin A I | Тиристор |
JPS5416839B2 (ja) * | 1973-03-06 | 1979-06-25 | ||
US3831187A (en) * | 1973-04-11 | 1974-08-20 | Rca Corp | Thyristor having capacitively coupled control electrode |
US3972061A (en) * | 1974-10-02 | 1976-07-27 | National Semiconductor Corporation | Monolithic lateral S.C.R. having reduced "on" resistance |
JPS5185381A (ja) * | 1975-01-24 | 1976-07-26 | Hitachi Ltd | |
SE392783B (sv) * | 1975-06-19 | 1977-04-18 | Asea Ab | Halvledaranordning innefattande en tyristor och en felteffekttransistordel |
US4055884A (en) * | 1976-12-13 | 1977-11-01 | International Business Machines Corporation | Fabrication of power field effect transistors and the resulting structures |
GB1586171A (en) * | 1977-01-31 | 1981-03-18 | Rca Corp | Gate turn-off device |
-
1978
- 1978-08-10 DE DE19782835089 patent/DE2835089A1/de active Granted
-
1979
- 1979-06-14 US US06/048,603 patent/US4942444A/en not_active Expired - Lifetime
- 1979-07-11 EP EP79102392A patent/EP0008008B1/de not_active Expired
- 1979-08-07 JP JP10068379A patent/JPS5524495A/ja active Pending
- 1979-08-08 CA CA000333391A patent/CA1139016A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2835089C2 (ja) | 1989-04-27 |
EP0008008B1 (de) | 1983-01-12 |
US4942444A (en) | 1990-07-17 |
DE2835089A1 (de) | 1980-03-20 |
CA1139016A (en) | 1983-01-04 |
EP0008008A1 (de) | 1980-02-20 |
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