JPS5518052A - Semiconductor laser modulator - Google Patents

Semiconductor laser modulator

Info

Publication number
JPS5518052A
JPS5518052A JP9105978A JP9105978A JPS5518052A JP S5518052 A JPS5518052 A JP S5518052A JP 9105978 A JP9105978 A JP 9105978A JP 9105978 A JP9105978 A JP 9105978A JP S5518052 A JPS5518052 A JP S5518052A
Authority
JP
Japan
Prior art keywords
controller
semiconductor laser
modulator
photo receptor
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9105978A
Other languages
Japanese (ja)
Inventor
Toyohiro Takimoto
Kenji Horikiri
Kenji Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9105978A priority Critical patent/JPS5518052A/en
Publication of JPS5518052A publication Critical patent/JPS5518052A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/06832—Stabilising during amplitude modulation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To modulate the output of a semiconductor laser regardless of temperature as desired by providing a modulation signal input terminal at a controller to generate a control signal to provide predetermined relationship between the modulation signal and a photo receptor. CONSTITUTION:A photo receptor 4 receives part 3 of the output light from a semiconductor laser 2 to convert in into an electric signal and to apply it to a controller 5. The controller 5 so generates a control signal as to provide predetermined relationship between the standard voltage and the output of the photo receptor 4. A drive unit 6 supplies current to the laser 2 in accordance with the control signal from the controller 5. When the modulation signal is applied as a standard voltage from a modulation input terminal 7, the output light intensity from the laser 2 can be varied by the modulation signal. Since the temperature characteristics of the photo receptor 4 and the controller 4 can be lowered sufficiently, the modulating function of the modulator 1 does not almost affect according to the temperature. Thus, the modulator can modulate the frequency determined by the time constant of the modulator 1 from the direct current regardless of the temperature change of the semiconductor laser.
JP9105978A 1978-07-25 1978-07-25 Semiconductor laser modulator Pending JPS5518052A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9105978A JPS5518052A (en) 1978-07-25 1978-07-25 Semiconductor laser modulator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9105978A JPS5518052A (en) 1978-07-25 1978-07-25 Semiconductor laser modulator

Publications (1)

Publication Number Publication Date
JPS5518052A true JPS5518052A (en) 1980-02-07

Family

ID=14015920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9105978A Pending JPS5518052A (en) 1978-07-25 1978-07-25 Semiconductor laser modulator

Country Status (1)

Country Link
JP (1) JPS5518052A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56117565U (en) * 1980-02-08 1981-09-08
JPS57155789A (en) * 1981-03-20 1982-09-25 Mitsubishi Electric Corp Semiconductor laser modulator
US4484209A (en) * 1980-12-12 1984-11-20 Tokyo Shibaura Denki Kabushiki Kaisha SOS Mosfet with thinned channel contact region
US4571609A (en) * 1980-06-16 1986-02-18 Tokyo Shibaura Denki Kabushiki Kaisha Stacked MOS device with means to prevent substrate floating
US4633282A (en) * 1982-10-04 1986-12-30 Rockwell International Corporation Metal-semiconductor field-effect transistor with a partial p-type drain
US4797721A (en) * 1987-04-13 1989-01-10 General Electric Company Radiation hardened semiconductor device and method of making the same
US5144390A (en) * 1988-09-02 1992-09-01 Texas Instruments Incorporated Silicon-on insulator transistor with internal body node to source node connection
US5316960A (en) * 1989-07-11 1994-05-31 Ricoh Company, Ltd. C-MOS thin film transistor device manufacturing method

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56117565U (en) * 1980-02-08 1981-09-08
US4571609A (en) * 1980-06-16 1986-02-18 Tokyo Shibaura Denki Kabushiki Kaisha Stacked MOS device with means to prevent substrate floating
US4484209A (en) * 1980-12-12 1984-11-20 Tokyo Shibaura Denki Kabushiki Kaisha SOS Mosfet with thinned channel contact region
JPS57155789A (en) * 1981-03-20 1982-09-25 Mitsubishi Electric Corp Semiconductor laser modulator
US4633282A (en) * 1982-10-04 1986-12-30 Rockwell International Corporation Metal-semiconductor field-effect transistor with a partial p-type drain
US4797721A (en) * 1987-04-13 1989-01-10 General Electric Company Radiation hardened semiconductor device and method of making the same
US5144390A (en) * 1988-09-02 1992-09-01 Texas Instruments Incorporated Silicon-on insulator transistor with internal body node to source node connection
US5316960A (en) * 1989-07-11 1994-05-31 Ricoh Company, Ltd. C-MOS thin film transistor device manufacturing method

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