JPS55165632A - Method for electron-beam exposure - Google Patents

Method for electron-beam exposure

Info

Publication number
JPS55165632A
JPS55165632A JP7381179A JP7381179A JPS55165632A JP S55165632 A JPS55165632 A JP S55165632A JP 7381179 A JP7381179 A JP 7381179A JP 7381179 A JP7381179 A JP 7381179A JP S55165632 A JPS55165632 A JP S55165632A
Authority
JP
Japan
Prior art keywords
scanning
memory
pattern
speed
point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7381179A
Other languages
Japanese (ja)
Other versions
JPS5759658B2 (en
Inventor
Yoshiaki Goto
Seigo Igaki
Yasuo Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7381179A priority Critical patent/JPS55165632A/en
Priority to DE8080901043T priority patent/DE3069060D1/en
Priority to PCT/JP1980/000125 priority patent/WO1980002772A1/en
Priority to EP19800901043 priority patent/EP0029857B1/en
Publication of JPS55165632A publication Critical patent/JPS55165632A/en
Publication of JPS5759658B2 publication Critical patent/JPS5759658B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To shorten exposing time, by abolishing the scanning of non-exposed portion, deflecting the electron beam by reading out the addresses in a memory, scanning the beam at a speed required for exposure, and deflecting the beam from the end of the scanning to the beginning point of the next scanning. CONSTITUTION:A beam-on point XON (the beginning point of the scanning pattern) and an off point XOFF (the end of the scanning pattern) are written into a pattern-package memory in the order of the raster. The beam is deflected by reading out the addresses in the order of the raster.The scanning speed in the X direction is the speed at which the electron-beam resist can be sensitized. The scanning method is a returing method. The beam deflected to XON position at the left end is scanned at a specified speed to the XOFF position at the right end. Then, the beam is deflected to the XON position at the right end of the scanning line, and continues the scanning. The process is repeated thereafter. In this method, since only the patterned portion is scanned, the exposing time is shortened. Since only the coordinates of the points of the beginning and the end are stored in the memory, the contents of the memory are few if the pattern is simple.
JP7381179A 1979-06-08 1979-06-12 Method for electron-beam exposure Granted JPS55165632A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP7381179A JPS55165632A (en) 1979-06-12 1979-06-12 Method for electron-beam exposure
DE8080901043T DE3069060D1 (en) 1979-06-08 1980-06-06 Electron beam projecting system
PCT/JP1980/000125 WO1980002772A1 (en) 1979-06-08 1980-06-06 Electron beam projecting system
EP19800901043 EP0029857B1 (en) 1979-06-08 1980-12-15 Electron beam projecting system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7381179A JPS55165632A (en) 1979-06-12 1979-06-12 Method for electron-beam exposure

Publications (2)

Publication Number Publication Date
JPS55165632A true JPS55165632A (en) 1980-12-24
JPS5759658B2 JPS5759658B2 (en) 1982-12-15

Family

ID=13528907

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7381179A Granted JPS55165632A (en) 1979-06-08 1979-06-12 Method for electron-beam exposure

Country Status (1)

Country Link
JP (1) JPS55165632A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5472683A (en) * 1977-11-01 1979-06-11 Buelow Fred K Electron beam device and method of using same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5472683A (en) * 1977-11-01 1979-06-11 Buelow Fred K Electron beam device and method of using same

Also Published As

Publication number Publication date
JPS5759658B2 (en) 1982-12-15

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