JPS5516434A - Transistor with builtiotan zener diodes - Google Patents

Transistor with builtiotan zener diodes

Info

Publication number
JPS5516434A
JPS5516434A JP8925678A JP8925678A JPS5516434A JP S5516434 A JPS5516434 A JP S5516434A JP 8925678 A JP8925678 A JP 8925678A JP 8925678 A JP8925678 A JP 8925678A JP S5516434 A JPS5516434 A JP S5516434A
Authority
JP
Japan
Prior art keywords
transistor
zener diodes
collecter
builtiotan
depletion layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8925678A
Other languages
Japanese (ja)
Inventor
Toshio Shigekane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP8925678A priority Critical patent/JPS5516434A/en
Publication of JPS5516434A publication Critical patent/JPS5516434A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To arrange each Zener diode so that each depletion layer respectively generating in a transistor collecter area arround the Zener diodes on both side when the highest voltage is applied on the transistor collecter.
CONSTITUTION: The intervals between each Zener diode ZD1, ZD2, ZD3, ZD4 will be made not equal and narrowed up to such a width as each depletion layer will not contact each other, when the highest voltage is applied on a collecter according to the extent of the depletion layer generating arround the Zener diodes on both sides. By doing so, no useless part will arise between each Zener diode.
COPYRIGHT: (C)1980,JPO&Japio
JP8925678A 1978-07-21 1978-07-21 Transistor with builtiotan zener diodes Pending JPS5516434A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8925678A JPS5516434A (en) 1978-07-21 1978-07-21 Transistor with builtiotan zener diodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8925678A JPS5516434A (en) 1978-07-21 1978-07-21 Transistor with builtiotan zener diodes

Publications (1)

Publication Number Publication Date
JPS5516434A true JPS5516434A (en) 1980-02-05

Family

ID=13965673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8925678A Pending JPS5516434A (en) 1978-07-21 1978-07-21 Transistor with builtiotan zener diodes

Country Status (1)

Country Link
JP (1) JPS5516434A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007049012A (en) * 2005-08-11 2007-02-22 Nec Electronics Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007049012A (en) * 2005-08-11 2007-02-22 Nec Electronics Corp Semiconductor device

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