JPS55162272A - Semiconductor pressure converter - Google Patents

Semiconductor pressure converter

Info

Publication number
JPS55162272A
JPS55162272A JP7076179A JP7076179A JPS55162272A JP S55162272 A JPS55162272 A JP S55162272A JP 7076179 A JP7076179 A JP 7076179A JP 7076179 A JP7076179 A JP 7076179A JP S55162272 A JPS55162272 A JP S55162272A
Authority
JP
Japan
Prior art keywords
strain gauge
concavity
pressure converter
supporting bed
semiconductor pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7076179A
Other languages
Japanese (ja)
Inventor
Toru Kameda
Shoichi Kakimoto
Josuke Nakada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7076179A priority Critical patent/JPS55162272A/en
Publication of JPS55162272A publication Critical patent/JPS55162272A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Abstract

PURPOSE:To protect a strain gauge from a gas to measure and thus to keep a high reliability for a long period of time by binding a diaphragm and a supporting bed with a diffusion strain gauge kept on concave side. CONSTITUTION:A face for which a strain gauge 3 for diaphragm 1 is formed on the upper surface of a concavity of a supporting bed 7 is fixed with an adhesive 9a for use on glass. In this case, the strain gauge 3 is kept on inside of the concavity 8 of the supporting bed, and a metallic electrode 5 is positioned on outside of the concavity 8. This constitution is available for a gas to measure to work only from the other face of the disphragm on which the diffusion strain gauge 3 is not formed. Therefore, the inside diffusion strain gauge is free from being affected any, thus obtaining a semiconductor pressure converter stable for a long period of time and high in reliability.
JP7076179A 1979-06-05 1979-06-05 Semiconductor pressure converter Pending JPS55162272A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7076179A JPS55162272A (en) 1979-06-05 1979-06-05 Semiconductor pressure converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7076179A JPS55162272A (en) 1979-06-05 1979-06-05 Semiconductor pressure converter

Publications (1)

Publication Number Publication Date
JPS55162272A true JPS55162272A (en) 1980-12-17

Family

ID=13440806

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7076179A Pending JPS55162272A (en) 1979-06-05 1979-06-05 Semiconductor pressure converter

Country Status (1)

Country Link
JP (1) JPS55162272A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63155675A (en) * 1986-12-18 1988-06-28 Nippon Denso Co Ltd Semiconductor pressure sensor
JPS63237482A (en) * 1987-03-25 1988-10-03 Nippon Denso Co Ltd Semiconductor pressure sensor
JPS63311774A (en) * 1987-06-12 1988-12-20 Nippon Denso Co Ltd Semiconductor pressure sensor and manufacture thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4856476A (en) * 1971-11-17 1973-08-08

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4856476A (en) * 1971-11-17 1973-08-08

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63155675A (en) * 1986-12-18 1988-06-28 Nippon Denso Co Ltd Semiconductor pressure sensor
JPS63237482A (en) * 1987-03-25 1988-10-03 Nippon Denso Co Ltd Semiconductor pressure sensor
JPS63311774A (en) * 1987-06-12 1988-12-20 Nippon Denso Co Ltd Semiconductor pressure sensor and manufacture thereof

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