JPS55162248A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55162248A
JPS55162248A JP7266180A JP7266180A JPS55162248A JP S55162248 A JPS55162248 A JP S55162248A JP 7266180 A JP7266180 A JP 7266180A JP 7266180 A JP7266180 A JP 7266180A JP S55162248 A JPS55162248 A JP S55162248A
Authority
JP
Japan
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7266180A
Other languages
English (en)
Inventor
Puratsueedaa Kaaru
Shiyuneraa Manfuretsuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS55162248A publication Critical patent/JPS55162248A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/298—Semiconductor material, e.g. amorphous silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3192—Multilayer coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP7266180A 1979-05-30 1980-05-30 Semiconductor device Pending JPS55162248A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792922005 DE2922005A1 (de) 1979-05-30 1979-05-30 Halbleiterbauelement mit passiviertem halbleiterkoerper

Publications (1)

Publication Number Publication Date
JPS55162248A true JPS55162248A (en) 1980-12-17

Family

ID=6072073

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7266180A Pending JPS55162248A (en) 1979-05-30 1980-05-30 Semiconductor device

Country Status (3)

Country Link
EP (1) EP0019887B1 (ja)
JP (1) JPS55162248A (ja)
DE (1) DE2922005A1 (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3138324A1 (de) * 1981-09-25 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Integrierter halbleiterschaltkreis
DE3205907A1 (de) * 1982-02-19 1983-09-08 Atlas Fahrzeugtechnik GmbH, 5980 Werdohl Fuehlkopf
DE3232168A1 (de) * 1982-08-30 1984-03-01 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement mit druckkontakt
JPS59198740A (ja) * 1983-04-25 1984-11-10 Mitsubishi Electric Corp 樹脂封止形半導体複合素子
DE3442131A1 (de) * 1984-11-17 1986-05-22 Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn Verfahren zum einkapseln von mikroelektronischen halbleiter- und schichtschaltungen
JPS61230344A (ja) * 1985-04-05 1986-10-14 Toray Silicone Co Ltd 樹脂封止型半導体装置
JPS61260657A (ja) * 1985-05-15 1986-11-18 Mitsubishi Electric Corp 半導体装置
DE3522091A1 (de) * 1985-06-20 1987-01-02 Siemens Ag Schichtschaltung mit umhuellung
EP0400178B1 (de) * 1989-05-31 1994-08-03 Siemens Aktiengesellschaft Halbleiterbauelement mit Passivierungsschicht
JPH07118534B2 (ja) * 1990-02-22 1995-12-18 三菱電機株式会社 半導体装置の製造方法
DE9003343U1 (de) * 1990-03-21 1990-05-23 Herion-Werke GmbH & Co. KG, 70736 Fellbach Vergußgekapselte Vorrichtung
DE10303449B4 (de) * 2003-01-29 2007-04-26 Siemens Ag Verfahren zum Umhüllen eines elektronischen Bauelementes
EP3113219B1 (de) * 2015-06-30 2020-03-11 SEMIKRON Elektronik GmbH & Co. KG Halbleiterbauelement und verfahren zu dessen herstellung

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2906932A (en) * 1955-06-13 1959-09-29 Sprague Electric Co Silicon junction diode
DE1184178B (de) * 1960-02-20 1964-12-23 Standard Elektrik Lorenz Ag Verfahren zum Stabilisieren der Oberflaeche von Halbleiterkoerpern mit pn-UEbergaengen durch Vakuumbedampfen
JPS5527463B2 (ja) * 1973-02-28 1980-07-21
DE2632647A1 (de) * 1976-07-20 1978-01-26 Siemens Ag Halbleiterbauelement mit passivierender schutzschicht
FR2404992A1 (fr) * 1977-10-03 1979-04-27 Cii Honeywell Bull Circuits electriques integres proteges, substrats d'interconnexion proteges comportant de tels circuits et procede d'obtention desdits circuits et substrats

Also Published As

Publication number Publication date
DE2922005A1 (de) 1980-12-04
EP0019887A1 (de) 1980-12-10
EP0019887B1 (de) 1983-04-13

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