JPS55159435A - Method of optically producing relief structure - Google Patents
Method of optically producing relief structureInfo
- Publication number
- JPS55159435A JPS55159435A JP6517580A JP6517580A JPS55159435A JP S55159435 A JPS55159435 A JP S55159435A JP 6517580 A JP6517580 A JP 6517580A JP 6517580 A JP6517580 A JP 6517580A JP S55159435 A JPS55159435 A JP S55159435A
- Authority
- JP
- Japan
- Prior art keywords
- relief structure
- producing relief
- phototechniques
- optically producing
- photo initiators
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003999 initiator Substances 0.000 abstract 2
- -1 aromatic azidomaleinimides Chemical class 0.000 abstract 1
- 150000001540 azides Chemical class 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/008—Azides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/12—Nitrogen compound containing
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Macromonomer-Based Addition Polymer (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Steroid Compounds (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19792919841 DE2919841A1 (de) | 1979-05-16 | 1979-05-16 | Verfahren zur phototechnischen herstellung von reliefstrukturen |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55159435A true JPS55159435A (en) | 1980-12-11 |
| JPS6364770B2 JPS6364770B2 (cg-RX-API-DMAC7.html) | 1988-12-13 |
Family
ID=6070909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6517580A Granted JPS55159435A (en) | 1979-05-16 | 1980-05-16 | Method of optically producing relief structure |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4287294A (cg-RX-API-DMAC7.html) |
| EP (1) | EP0019122B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JPS55159435A (cg-RX-API-DMAC7.html) |
| AT (1) | ATE14634T1 (cg-RX-API-DMAC7.html) |
| DE (2) | DE2919841A1 (cg-RX-API-DMAC7.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61167941A (ja) * | 1985-01-15 | 1986-07-29 | チバ―ガイギー アクチエンゲゼルシヤフト | 高感度ポリアミドエステルホトレジスト組成物 |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5744143A (en) * | 1980-08-29 | 1982-03-12 | Tokyo Ohka Kogyo Co Ltd | Composition and method for forming micropattern |
| US4556625A (en) * | 1982-07-09 | 1985-12-03 | Armstrong World Industries, Inc. | Development of a colored image on a cellulosic material with monosulfonyl azides |
| US4548891A (en) * | 1983-02-11 | 1985-10-22 | Ciba Geigy Corporation | Photopolymerizable compositions containing prepolymers with olefin double bonds and titanium metallocene photoinitiators |
| US4656116A (en) * | 1983-10-12 | 1987-04-07 | Ciba-Geigy Corporation | Radiation-sensitive coating composition |
| US4571375A (en) * | 1983-10-24 | 1986-02-18 | Benedikt George M | Ring-opened polynorbornene negative photoresist with bisazide |
| DE3342851A1 (de) * | 1983-11-26 | 1985-06-05 | Merck Patent Gmbh, 6100 Darmstadt | Fotolacke |
| US4622284A (en) * | 1984-03-01 | 1986-11-11 | Digital Recording Corporation | Process of using metal azide recording media with laser |
| US4830953A (en) * | 1986-08-18 | 1989-05-16 | Ciba-Geigy Corporation | Radiation-sensitive coating composition with polyazide and polyimide and process of photo-crosslinking the coating |
| US5270431A (en) * | 1987-07-23 | 1993-12-14 | Basf Aktiengesellschaft | Preparation of oligomeric or polymeric radiation-reactive intermediates for solvent-structured layers |
| DE3833437A1 (de) * | 1988-10-01 | 1990-04-05 | Basf Ag | Strahlungsempfindliche gemische und deren verwendung |
| DE3833438A1 (de) * | 1988-10-01 | 1990-04-05 | Basf Ag | Strahlungsempfindliche gemische und deren verwendung |
| DE4217688A1 (de) * | 1992-05-29 | 1993-12-02 | Basf Lacke & Farben | Durch Einwirkung von Strahlung vernetzendes Gemisch und dessen Verwendung zur Herstellung hochtemperaturbeständiger Reliefstrukturen |
| DE4328839C2 (de) * | 1993-08-27 | 1997-12-04 | Basf Lacke & Farben | N-(4-Azidosulfonylphenyl)-tetrahydrophthalimid sowie die Verwendung von N-(4-Azidosulfonylphenyl)-phthalimid und/oder N-(Azidosulfonylphenyl)-tetrahydrophthalimid |
| WO1998007759A1 (en) | 1996-08-23 | 1998-02-26 | First Chemical Corporation | Polymerization processes using aliphatic maleimides |
| US20040235976A1 (en) * | 1996-08-23 | 2004-11-25 | Hoyle Charles E. | Polymerization processes using alphatic maleimides |
| US6153662A (en) * | 1997-05-27 | 2000-11-28 | University Of Southern Mississippi | Aromatic maleimides and methods of using the same |
| TWI238841B (en) | 1998-01-30 | 2005-09-01 | Albemarle Corp | Photopolymerization compositions including maleimides and method thereof |
| ES2660495T3 (es) | 2013-11-07 | 2018-03-22 | Akzo Nobel Chemicals International B.V. | Proceso para modificar polímeros |
| CA2928332A1 (en) | 2013-11-07 | 2015-05-14 | Akzo Nobel Chemicals International B.V. | Process for modifying ethylene-based polymers and copolymers |
| RU2016121180A (ru) | 2013-11-07 | 2017-12-08 | Акцо Нобель Кемикалз Интернэшнл Б.В. | Азид циклического карбоната |
| RU2017134782A (ru) | 2015-04-24 | 2019-04-04 | Акцо Нобель Кемикалз Интернэшнл Б.В. | Способ модифицирования полимеров |
| MX2017013393A (es) | 2015-04-24 | 2018-01-30 | Akzo Nobel Chemicals Int Bv | Proceso para funcionalizar polimeros. |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3485732A (en) * | 1966-03-02 | 1969-12-23 | Ppg Industries Inc | Highly radiation-sensitive telomerized polyesters |
| US3475176A (en) * | 1966-09-06 | 1969-10-28 | Eastman Kodak Co | Azide sensitized photosensitive prepolymer compositions |
| US3979426A (en) * | 1971-08-12 | 1976-09-07 | Ppg Industries, Inc. | Radiation-sensitive diacrylates |
| NL177718C (nl) * | 1973-02-22 | 1985-11-01 | Siemens Ag | Werkwijze ter vervaardiging van reliefstructuren uit warmte-bestendige polymeren. |
| US3871930A (en) * | 1973-12-19 | 1975-03-18 | Texas Instruments Inc | Method of etching films made of polyimide based polymers |
| USRE30186E (en) | 1974-08-02 | 1980-01-08 | Siemens Aktiengesellschaft | Method for the preparation of relief structures |
| DE2437348B2 (de) * | 1974-08-02 | 1976-10-07 | Ausscheidung in: 24 62 105 | Verfahren zur herstellung von reliefstrukturen |
-
1979
- 1979-05-16 DE DE19792919841 patent/DE2919841A1/de not_active Withdrawn
-
1980
- 1980-04-25 EP EP80102259A patent/EP0019122B1/de not_active Expired
- 1980-04-25 DE DE8080102259T patent/DE3070917D1/de not_active Expired
- 1980-04-25 AT AT80102259T patent/ATE14634T1/de not_active IP Right Cessation
- 1980-05-09 US US06/148,129 patent/US4287294A/en not_active Expired - Lifetime
- 1980-05-16 JP JP6517580A patent/JPS55159435A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61167941A (ja) * | 1985-01-15 | 1986-07-29 | チバ―ガイギー アクチエンゲゼルシヤフト | 高感度ポリアミドエステルホトレジスト組成物 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0019122A3 (en) | 1981-05-27 |
| US4287294A (en) | 1981-09-01 |
| ATE14634T1 (de) | 1985-08-15 |
| DE3070917D1 (en) | 1985-09-05 |
| EP0019122A2 (de) | 1980-11-26 |
| EP0019122B1 (de) | 1985-07-31 |
| DE2919841A1 (de) | 1980-11-20 |
| JPS6364770B2 (cg-RX-API-DMAC7.html) | 1988-12-13 |
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