JPS55156423A - Base drive for power transistor - Google Patents

Base drive for power transistor

Info

Publication number
JPS55156423A
JPS55156423A JP6364679A JP6364679A JPS55156423A JP S55156423 A JPS55156423 A JP S55156423A JP 6364679 A JP6364679 A JP 6364679A JP 6364679 A JP6364679 A JP 6364679A JP S55156423 A JPS55156423 A JP S55156423A
Authority
JP
Japan
Prior art keywords
pulse transformer
power transistor
base drive
primary
secondary windings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6364679A
Other languages
Japanese (ja)
Inventor
Hiroki Fujiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP6364679A priority Critical patent/JPS55156423A/en
Publication of JPS55156423A publication Critical patent/JPS55156423A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/601—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors using transformer coupling

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To improve rising characteristics of an output current by connecting a damping resistance between terminals of either of the primary and the secondary windings of a pulse transformer. CONSTITUTION:Across either of the primary and the secondary windings of pulse transformer 5, damping resistance 10 is connected. In this circuit, the junction capacity of driving transistor 4 is small and the leakage reactance of pulse transformer 5 is great, so that even when the resistance value of damping resistance 10 is relatively great, sufficiently-effective damping effect can be obtained.
JP6364679A 1979-05-23 1979-05-23 Base drive for power transistor Pending JPS55156423A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6364679A JPS55156423A (en) 1979-05-23 1979-05-23 Base drive for power transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6364679A JPS55156423A (en) 1979-05-23 1979-05-23 Base drive for power transistor

Publications (1)

Publication Number Publication Date
JPS55156423A true JPS55156423A (en) 1980-12-05

Family

ID=13235312

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6364679A Pending JPS55156423A (en) 1979-05-23 1979-05-23 Base drive for power transistor

Country Status (1)

Country Link
JP (1) JPS55156423A (en)

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