JPS55156359A - Logic gate using multiidrain mos transistor - Google Patents

Logic gate using multiidrain mos transistor

Info

Publication number
JPS55156359A
JPS55156359A JP6658280A JP6658280A JPS55156359A JP S55156359 A JPS55156359 A JP S55156359A JP 6658280 A JP6658280 A JP 6658280A JP 6658280 A JP6658280 A JP 6658280A JP S55156359 A JPS55156359 A JP S55156359A
Authority
JP
Japan
Prior art keywords
multiidrain
mos transistor
logic gate
logic
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6658280A
Other languages
English (en)
Japanese (ja)
Inventor
Ruisu Radeii Jiin
Majiyosu Jiyakasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gouvernement de la Republique Francaise
Original Assignee
Gouvernement de la Republique Francaise
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gouvernement de la Republique Francaise filed Critical Gouvernement de la Republique Francaise
Publication of JPS55156359A publication Critical patent/JPS55156359A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • H03K19/09414—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors with gate injection or static induction [STIL]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
    • H03K19/09443—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type using a combination of enhancement and depletion transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Logic Circuits (AREA)
JP6658280A 1979-05-21 1980-05-21 Logic gate using multiidrain mos transistor Pending JPS55156359A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7912910A FR2457605A2 (fr) 1979-05-21 1979-05-21 Perfectionnements aux portes logiques a transistors mos multidrains

Publications (1)

Publication Number Publication Date
JPS55156359A true JPS55156359A (en) 1980-12-05

Family

ID=9225698

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6658280A Pending JPS55156359A (en) 1979-05-21 1980-05-21 Logic gate using multiidrain mos transistor

Country Status (6)

Country Link
EP (1) EP0019560B1 (online.php)
JP (1) JPS55156359A (online.php)
CA (1) CA1142269A (online.php)
DE (1) DE3060914D1 (online.php)
ES (1) ES8201768A1 (online.php)
FR (1) FR2457605A2 (online.php)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61179616A (ja) * 1984-10-19 1986-08-12 テイア−ルダブリユ−　インコ−ポレ−テツド ワイヤ−ド・アンドｆｅｔ論理ゲ−ト

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8401117A (nl) * 1984-04-09 1985-11-01 Philips Nv Halfgeleiderinrichting met veldeffekttransistors met geisoleerde poortelektrode.
US4684967A (en) * 1984-05-04 1987-08-04 Integrated Logic Systems, Inc. Low capacitance transistor cell element and transistor array
EP1191601B1 (en) * 2000-09-21 2007-11-28 STMicroelectronics S.r.l. A lateral DMOS transistor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5268382A (en) * 1975-12-05 1977-06-07 Hitachi Ltd Semiconductor circuit unit
JPS608628B2 (ja) * 1976-07-05 1985-03-04 ヤマハ株式会社 半導体集積回路装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61179616A (ja) * 1984-10-19 1986-08-12 テイア−ルダブリユ−　インコ−ポレ−テツド ワイヤ−ド・アンドｆｅｔ論理ゲ−ト

Also Published As

Publication number Publication date
FR2457605A2 (fr) 1980-12-19
EP0019560A1 (fr) 1980-11-26
EP0019560B1 (fr) 1982-10-06
ES491626A0 (es) 1981-11-16
CA1142269A (en) 1983-03-01
DE3060914D1 (en) 1982-11-11
FR2457605B2 (online.php) 1982-11-19
ES8201768A1 (es) 1981-11-16

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