JPS55136109A - Production of gap - Google Patents

Production of gap

Info

Publication number
JPS55136109A
JPS55136109A JP4029279A JP4029279A JPS55136109A JP S55136109 A JPS55136109 A JP S55136109A JP 4029279 A JP4029279 A JP 4029279A JP 4029279 A JP4029279 A JP 4029279A JP S55136109 A JPS55136109 A JP S55136109A
Authority
JP
Japan
Prior art keywords
gas
gapo
moldings
container
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4029279A
Other languages
Japanese (ja)
Inventor
Keijiro Hirahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4029279A priority Critical patent/JPS55136109A/en
Publication of JPS55136109A publication Critical patent/JPS55136109A/en
Pending legal-status Critical Current

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  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

PURPOSE: To produce GaP with a little reducing gas in a short time by compression- molding GaPO4 power followed by reduction in a reducing atmosphere.
CONSTITUTION: Reaction container 52 is put into vertical type furnace 51. In container 52 disklike compression moldings 53 of GaPO4 powder are arranged on gas permeable boat 54. A reducing gas such as H2 gas is introduced from gas pass 56 to fill container 52 with a H2 gas atmosphere. Exhaust gas is exhausted from exhaust gas pass 55. GaPO4 moldings 53 are heated to an appropriate temp. with heater 57 set by the side of container 52, and they are reduced with H2 gas. Since the arrangement of moldings 53 accords with the flow of H2 gas, a H2 current of one direction is only required, and reaction products such as H2O are quickly exhausted. Because of moldings much starting material GaPO4 can be supplied as compared to powder, so the time required to obtain a fixed amt. of GaP is shortened in spite of slow proceeding of reduction, and the amt. of H2 gas used is reduced.
COPYRIGHT: (C)1980,JPO&Japio
JP4029279A 1979-04-05 1979-04-05 Production of gap Pending JPS55136109A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4029279A JPS55136109A (en) 1979-04-05 1979-04-05 Production of gap

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4029279A JPS55136109A (en) 1979-04-05 1979-04-05 Production of gap

Publications (1)

Publication Number Publication Date
JPS55136109A true JPS55136109A (en) 1980-10-23

Family

ID=12576521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4029279A Pending JPS55136109A (en) 1979-04-05 1979-04-05 Production of gap

Country Status (1)

Country Link
JP (1) JPS55136109A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0056586A2 (en) * 1981-01-17 1982-07-28 Kabushiki Kaisha Toshiba Method for manufacturing gallium phosphide single crystals

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5312078U (en) * 1976-07-10 1978-02-01
JPS545999B2 (en) * 1972-02-18 1979-03-23

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS545999B2 (en) * 1972-02-18 1979-03-23
JPS5312078U (en) * 1976-07-10 1978-02-01

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0056586A2 (en) * 1981-01-17 1982-07-28 Kabushiki Kaisha Toshiba Method for manufacturing gallium phosphide single crystals
EP0056586A3 (en) * 1981-01-17 1982-08-04 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing gallium phosphide single crystals

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